Improving ZnO-based photodetectors via Mn doping and RGO integration for visible light sensitivity

IF 4.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2025-04-12 DOI:10.1016/j.sna.2025.116576

Nhat Quang-Khoi Le , Nhat Minh Nguyen , Nhat Giang Doan , Duc Anh Ngo , Tuong Vy Nguyen Thi , Hung Quang Huynh , Huynh Tran My Hoa , Cong Khanh Tran , Phan Phuong Ha La , Thi Thanh Van Tran , Le Thai Duy , Vinh Quang Dang

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引用次数: 0

Abstract

Zinc oxide (ZnO) nanorods are a cornerstone of optoelectronic research due to their high surface-to-volume ratio, direct charge transport pathways, and tunable electronic properties. However, their wide band gap restricts their photoresponse, limiting their applicability. Doping ZnO with manganese (Mn) has gained interest for enhancing visible-light absorption. This study investigates the effect of low Mn-doping concentrations (1–6 wt%) on optical, structural, and electrical properties of ZnO nanorods (NRs). At an optimal 4 % Mn doping, the optical band gap is reduced from 3.31 to 3.13 eV, enabling visible-light absorption while maintaining material integrity. To enhance carrier separation and charge transport of Mn-doped-ZnO-based photodetectors, this study also employs a reduced-graphene-oxide transport layer before the deposition of the active material, resulting in a 10-fold responsivity boost, 100-fold photoconductive gain, and over 1000-fold detectivity improvement under 395 nm excitation. In general, this work not only advances the understanding of band gap engineering in ZnO NRs but also presents a scalable and efficient approach for high-performance visible-light photodetectors, paving the way for their integration into flexible and miniaturized optoelectronic devices.

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...