III-V quantum dots: A multidimensional exploration from eco-friendly materials to near infrared optoelectronic applications

Abstract

III-V (InP, InAs, InSb) quantum dots (QDs) have emerged as promising alternatives to lead/cadmium-based QDs due to their lower toxicity and tunable optoelectronic properties. Advances in colloidal synthesis have enabled the development of heterostructures, ligand engineering, and surface modifications in III-V QDs, allowing for spectral tunability from blue to near-infrared (NIR), narrow emission linewidths, and high quantum yields. Furthermore, III-V QDs exhibit higher covalency compared to lead/cadmium-based counterparts, enhancing their performance in various applications: the state-of-the-art InP QDs, with appealing optical and electronic properties, have demonstrated excellent in light-emitting diodes (LEDs); InAs QDs provide higher sensitivity and lower phototoxicity for biological imaging and light emission; and InSb QDs are becoming promising candidate for shortwave infrared (SWIR) photodetectors with bandgap tunability extending into the mid-infrared (MIR) range. Considering the growing significance of III-V QDs, it is timely to provide a focused review that summarizes the advancements in their synthesis methods, heterostructures, ligand engineering, surface modifications and shape engineering. Such a review will also explore the diverse applications of III-V QDs and their potential for future development. By highlighting key innovations and addressing current challenges, this review will offer valuable insights into the evolving role of III-V QDs in fields ranging from optoelectronics to biological imaging and infrared technologies.