Honeycomb-like open-edged reduced-graphene-oxide (rGO)-incorporated NiO/Co3O4 as advanced cathodes as hybrid supercapacitors for energy storage device applications

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
P. Priyadharshini, K. Vanasundari, P. Sureka, G. Mahalakshmi
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引用次数: 0

Abstract

Honeycomb-like open-edged reduced-graphene-oxide nanosheets (HOrGO NSs) filled with transition metal oxides (TMOs) as Co3O4/NiO nanoparticles (NPs) have been synthesized by a simple and cost-effective hydrothermal-calcination route. The properties of the prepared materials were studied by powder X-ray diffraction, scanning electron microscopy, TEM, XPS, and Brunauer−Emmett−Teller techniques. The hybrid electrode has a high specific capacity of 1345 Fg−1 at 1 Ag−1 with a superior rate performance of 93.6% capacity retention even at a current density of 1 Ag−1. Moreover, the assembled Co3O4/NiO/rGO//AC hybrid supercapacitor achieves excellent performance with a maximum voltage of 1.6 V and a high energy density of 65.2 Whkg−1 at a power density of 780 Wkg−1 and excellent cycle stability performance with a capacity retention of 98.1% after 10,000 cycles. The excellent electrochemical performance is probably attributed to highly dispersed cobalt and nickel oxides nanoparticles on rGO nanosheets. This can increase the electron conductivity, provide more exposed electroactive sites, and facilitate the faradaic redox processes.

蜂窝状开边还原氧化石墨烯(rGO)将NiO/Co3O4作为先进阴极,用于储能设备应用的混合超级电容器
通过简单而经济的水热煅烧路线合成了蜂窝状开边还原石墨烯-氧化物纳米片(HOrGO NSs),其中填充了作为 Co3O4/NiO 纳米颗粒(NPs)的过渡金属氧化物(TMOs)。粉末 X 射线衍射、扫描电子显微镜、TEM、XPS 和 Brunauer-Emmett-Teller 技术研究了所制备材料的特性。该混合电极在 1 Ag-1 的条件下具有 1345 Fg-1 的高比容量,即使在 1 Ag-1 的电流密度下也具有 93.6% 的容量保持率。此外,组装后的 Co3O4/NiO/rGO//AC 混合超级电容器性能优异,在功率密度为 780 Wkg-1 时,最大电压为 1.6 V,能量密度高达 65.2 Whkg-1,循环稳定性能极佳,10000 次循环后容量保持率为 98.1%。优异的电化学性能可能归功于 rGO 纳米片上高度分散的钴和镍氧化物纳米颗粒。这可以增加电子传导性,提供更多暴露的电活性位点,促进远红外氧化还原过程。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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