{"title":"Structure and dielectric properties of 0.70 Ba 1-x La2x/3TiO3-0.30 Bi (Mg0.5 Ti0.5) O3 ceramics","authors":"Shekhar Kumar, Md. Kashif Shamim, Divya Kumari, Seema Sharma","doi":"10.1007/s10854-025-14708-z","DOIUrl":null,"url":null,"abstract":"<div><p>In the present work, we synthesized La-doped 0.70 Ba <sub><i>1-x</i></sub> La<sub><i>2x/3</i></sub>TiO<sub><i>3</i></sub>-0.30 Bi (Mg<sub><i>0.5</i></sub> Ti<sub><i>0.5</i></sub>) O<sub>3</sub> ceramics (where <i>x</i>-0.02, 0.04, 0.06, 0.08) hereby designated as BLT-BMT by conventional solid-state sintering method. The emphasis was to evaluate the structure and dielectric properties of BLT-BMT as a function of La concentration. Reitveld refinement of the structure confirmed single-phase perovskite structure with pseudo-cubic symmetry. Incorporation of La<sub><i>2</i></sub>O<sub><i>3</i></sub> into the ceramic matrix resulted in the decrease of lattice parameters and cell volumes, this infers that long-range ordering has been destroyed in the samples. This statement is further supported by Raman measurements. Shift in the dielectric peaks was observed towards higher-temperature side with increasing frequency, and this may be attributed to the effects induced by La<sup>3+</sup> incorporation. This also improves the temperature stability of dielectric permittivity which in turn supports the relaxation behavior present in all the compositions. Dielectric diffusivity of the samples was found to lie between 1.52 and 1.67, while the activation energy was found to increase from 0.25 to 0.42 eV with increase in La concentration<b><i>.</i></b> All the samples exhibit Negative temperature Coefficient of Resistance (NTCR) behavior. Conductivity increases with increasing temperature for all the compositions.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 11","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14708-z","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In the present work, we synthesized La-doped 0.70 Ba 1-x La2x/3TiO3-0.30 Bi (Mg0.5 Ti0.5) O3 ceramics (where x-0.02, 0.04, 0.06, 0.08) hereby designated as BLT-BMT by conventional solid-state sintering method. The emphasis was to evaluate the structure and dielectric properties of BLT-BMT as a function of La concentration. Reitveld refinement of the structure confirmed single-phase perovskite structure with pseudo-cubic symmetry. Incorporation of La2O3 into the ceramic matrix resulted in the decrease of lattice parameters and cell volumes, this infers that long-range ordering has been destroyed in the samples. This statement is further supported by Raman measurements. Shift in the dielectric peaks was observed towards higher-temperature side with increasing frequency, and this may be attributed to the effects induced by La3+ incorporation. This also improves the temperature stability of dielectric permittivity which in turn supports the relaxation behavior present in all the compositions. Dielectric diffusivity of the samples was found to lie between 1.52 and 1.67, while the activation energy was found to increase from 0.25 to 0.42 eV with increase in La concentration. All the samples exhibit Negative temperature Coefficient of Resistance (NTCR) behavior. Conductivity increases with increasing temperature for all the compositions.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.