Structure and dielectric properties of 0.70 Ba 1-x La2x/3TiO3-0.30 Bi (Mg0.5 Ti0.5) O3 ceramics

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Shekhar Kumar, Md. Kashif Shamim, Divya Kumari, Seema Sharma
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Abstract

In the present work, we synthesized La-doped 0.70 Ba 1-x La2x/3TiO3-0.30 Bi (Mg0.5 Ti0.5) O3 ceramics (where x-0.02, 0.04, 0.06, 0.08) hereby designated as BLT-BMT by conventional solid-state sintering method. The emphasis was to evaluate the structure and dielectric properties of BLT-BMT as a function of La concentration. Reitveld refinement of the structure confirmed single-phase perovskite structure with pseudo-cubic symmetry. Incorporation of La2O3 into the ceramic matrix resulted in the decrease of lattice parameters and cell volumes, this infers that long-range ordering has been destroyed in the samples. This statement is further supported by Raman measurements. Shift in the dielectric peaks was observed towards higher-temperature side with increasing frequency, and this may be attributed to the effects induced by La3+ incorporation. This also improves the temperature stability of dielectric permittivity which in turn supports the relaxation behavior present in all the compositions. Dielectric diffusivity of the samples was found to lie between 1.52 and 1.67, while the activation energy was found to increase from 0.25 to 0.42 eV with increase in La concentration. All the samples exhibit Negative temperature Coefficient of Resistance (NTCR) behavior. Conductivity increases with increasing temperature for all the compositions.

0.70 Ba 1-x La2x/3TiO3-0.30 Bi (Mg0.5 Ti0.5) O3陶瓷的结构和介电性能
在本研究中,我们采用传统固态烧结法合成了掺有 La 的 0.70 Ba 1-x La2x/3TiO3-0.30 Bi (Mg0.5 Ti0.5) O3 陶瓷(其中 x 为 0.02、0.04、0.06、0.08),并将其命名为 BLT-BMT。重点是评估 BLT-BMT 的结构和介电性能与 La 浓度的函数关系。结构的 Reitveld 精炼证实了具有伪立方对称性的单相包晶结构。在陶瓷基体中加入 La2O3 会导致晶格参数和晶胞体积下降,这表明样品中的长程有序性已被破坏。拉曼测量进一步证实了这一点。随着频率的增加,观察到介质峰向温度较高的一侧移动,这可能是由于掺入 La3+ 所引起的影响。这也提高了介电常数的温度稳定性,进而支持了所有成分中存在的弛豫行为。发现样品的介电扩散率介于 1.52 和 1.67 之间,而活化能随着 La 浓度的增加从 0.25 eV 增加到 0.42 eV。所有样品都表现出负温度电阻系数 (NTCR) 行为。所有成分的电导率都随着温度的升高而增加。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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