Ag nanoarray sensors: Theoretical frameworks for surface plasmon enhancement of fluorescence signals

IF 4.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2025-04-09 DOI:10.1016/j.sna.2025.116558

Andrii Lopatynskyi , Vitalii Lytvyn , Mariia Khutko , Anatoliy Pinchuk , Volodymyr Chegel

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Abstract

We outline the theoretical analysis of a plasmonic sensor based on plasmon-enhanced fluorescence by nanoarrays on a glass substrate (plasmonic nanochip). We use, as a model, a thermally annealed vacuum-sputtered silver nanoisland film. The parameters of the silver nanostructures are optimized using an analytical model based on dyadic Green’s function and volumetric Lippmann-Schwinger equations. We present analytical simulations of fluorescence enhancement, quenching, as well as quantum yield modification. We obtained optimized distances from the nanostructures to fluorophore molecules that lead to the maximum fluorescence enhancement factor, taking into account the size distribution for silver nanostructures comprising the nanochip. Specifically, a monotonic shift of the fluorescence enhancement factor to higher values with an increase in the mean silver nanostructure radius up to 120 nm was observed. At the same time, the influence of the standard deviation of the mean silver nanostructure radius on the fluorescence enhancement factor was multidirectional for small and large silver nanostructures. As a result, it was shown that the fluorescence enhancement factor could be improved up to ∼120 times compared to that of a non-optimized (base) Ag nanochip and can be as high as an ultimate ∼1000 depending on the light wavelength.

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我们概述了基于玻璃基板上纳米阵列的质子增强荧光的质子传感器（质子纳米芯片）的理论分析。我们使用热退火真空溅射银纳米岛薄膜作为模型。银纳米结构的参数通过基于二元格林函数和体积李普曼-施温格方程的分析模型进行优化。我们介绍了荧光增强、淬灭以及量子产率修正的分析模拟。考虑到组成纳米芯片的银纳米结构的尺寸分布，我们获得了从纳米结构到荧光团分子的最佳距离，从而获得最大荧光增强因子。具体来说，随着银纳米结构平均半径增加到 120 纳米，荧光增强因子单调地向更高值移动。同时，平均银纳米结构半径的标准偏差对荧光增强因子的影响对于小尺寸和大尺寸银纳米结构来说都是多向的。结果表明，与未优化的（基底）银纳米芯片相比，荧光增强因子最多可提高 120 倍，根据光波长的不同，荧光增强因子最高可达 1000。

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...