{"title":"Alkali Metal/Mercury Dual-Metal Sulfides as Infrared Nonlinear Optical Materials with High Laser-induced Damage Thresholds","authors":"Guili Wang, Bohui Xu, Chunxiao Li, Pifu Gong, Zheshuai Lin, Jiyong Yao","doi":"10.1039/d5dt00180c","DOIUrl":null,"url":null,"abstract":"Two new mercury-based sulfides, Rb2HgGe3S8 and Cs2HgGe3S8, were successfully synthesized by the high-temperature solid-state reaction, and they are isostructural to crystallize in the non-centrosymmetric orthorhombic space group P212121. The results of the experiments indicate that Rb2HgGe3S8 has a large band gap of 3.26 eV, a second harmonic generation (SHG) response of 0.17 × AgGaS2 (AGS) at the particle size of 90−125 μm, and non-phase-matchable (NPM) properties. Additionally, Cs2HgGe3S8 exhibits a SHG response of 0.13 × AGS (particle size of 90−125 μm) as well as type-I phase-matchable (PM) performance at 2090 nm. Moreover, Rb2HgGe3S8 and Cs2HgGe3S8 exhibit high laser-induced damage thresholds of 3.1 and 2.7 × AGS, respectively. Theoretical calculations reveal that Rb2HgGe3S8 and Cs2HgGe3S8 are two direct semiconductors with the calculated band gap of 2.32 and 2.15 eV and the synergistic action of [HgS4] and [GeS4] units realizes their SHG response.","PeriodicalId":71,"journal":{"name":"Dalton Transactions","volume":"16 1","pages":""},"PeriodicalIF":3.5000,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Dalton Transactions","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.1039/d5dt00180c","RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, INORGANIC & NUCLEAR","Score":null,"Total":0}
引用次数: 0
Abstract
Two new mercury-based sulfides, Rb2HgGe3S8 and Cs2HgGe3S8, were successfully synthesized by the high-temperature solid-state reaction, and they are isostructural to crystallize in the non-centrosymmetric orthorhombic space group P212121. The results of the experiments indicate that Rb2HgGe3S8 has a large band gap of 3.26 eV, a second harmonic generation (SHG) response of 0.17 × AgGaS2 (AGS) at the particle size of 90−125 μm, and non-phase-matchable (NPM) properties. Additionally, Cs2HgGe3S8 exhibits a SHG response of 0.13 × AGS (particle size of 90−125 μm) as well as type-I phase-matchable (PM) performance at 2090 nm. Moreover, Rb2HgGe3S8 and Cs2HgGe3S8 exhibit high laser-induced damage thresholds of 3.1 and 2.7 × AGS, respectively. Theoretical calculations reveal that Rb2HgGe3S8 and Cs2HgGe3S8 are two direct semiconductors with the calculated band gap of 2.32 and 2.15 eV and the synergistic action of [HgS4] and [GeS4] units realizes their SHG response.
期刊介绍:
Dalton Transactions is a journal for all areas of inorganic chemistry, which encompasses the organometallic, bioinorganic and materials chemistry of the elements, with applications including synthesis, catalysis, energy conversion/storage, electrical devices and medicine. Dalton Transactions welcomes high-quality, original submissions in all of these areas and more, where the advancement of knowledge in inorganic chemistry is significant.