R. Balaji, Pandurangan Mohan, B. Prakash, V. Ganesh
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引用次数: 0
Abstract
In this work, we report on pure and Er-doped (1, 2, 3, 4, and 5 wt.%) WO3 thin films prepared via the nebulizer spray pyrolysis technique. The microcrystalline structure, surface morphology, optical properties, and gas-sensing characteristics of the films were studied. XRD analysis revealed that the prepared samples exhibited hexagonal crystal structures, with an increase in grain size from 48 to 63 nm for the WO3:Er2% thin film. FESEM analysis showed a nanofibrous network morphology, with increased porosity and reduced nanofiber size observed in the WO3:Er2% film. Photoluminescence (PL) spectra demonstrated six emission peaks at 360, 400, 420, 445, 475, and 520 nm for both the pristine and WO3:Er films, with maximum PL emission noted for the 2% Er doped sample. Optical measurements indicated a decrease in transmission spectra from pure to WO3:Er2%, with the optical bandgap decreasing from 3.2 eV to 2.9 eV for the WO3:Er2% film. Key gas-sensing parameters, including gas responsivity, response and recovery time, were measured as 368, 5.2 s, and 6.7 s, respectively, for the WO3:Er2% thin film, confirming its strong gas-sensing capabilities. This study demonstrates that WO3:Er2% thin film is an efficient, fast-responding gas sensor, developed using the simple and cost-effective nebulizer spray pyrolysis method.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.