Integrating Hard Silicon for High-Performance Soft Electronics via Geometry Engineering

IF 26.6 1区材料科学 Q1 Engineering

Nano-Micro Letters Pub Date : 2025-04-14 DOI:10.1007/s40820-025-01724-1

Lei Yan, Zongguang Liu, Junzhuan Wang, Linwei Yu

引用次数: 0

Abstract

Highlights

Crystalline silicon (c-Si) is one of the most mature and reliable materials for high-performance electronic devices and has garnered widespread attention in the field of flexible electronics.
This article examines the detailed transition enabled by geometry engineering from "3D bulk materials" to "2D thin films," and ultimately to "1D nanowires," highlighting the advancements and challenges in enhancing the flexibility and mechanical properties of c-Si.
We emphasize the forefront applications of silicon nanowires in wearable electronics and healthcare, aiming to accelerate the rapid development of c-Si within the realm of flexible electronics.

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通过几何工程整合硬硅实现高性能软电子器件

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来源期刊

Nano-Micro Letters NANOSCIENCE & NANOTECHNOLOGY-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

32.60

自引率

4.90%

发文量

981

审稿时长

1.1 months

期刊介绍： Nano-Micro Letters is a peer-reviewed, international, interdisciplinary, and open-access journal published under the SpringerOpen brand. Nano-Micro Letters focuses on the science, experiments, engineering, technologies, and applications of nano- or microscale structures and systems in various fields such as physics, chemistry, biology, material science, and pharmacy.It also explores the expanding interfaces between these fields. Nano-Micro Letters particularly emphasizes the bottom-up approach in the length scale from nano to micro. This approach is crucial for achieving industrial applications in nanotechnology, as it involves the assembly, modification, and control of nanostructures on a microscale.