Modeling and analysis of ear dynamics with a round-window stimulating active middle ear implant

IF 4.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2025-04-09 DOI:10.1016/j.sna.2025.116564

Yinxin Kou , Jie Wang , Zhaohai Liu , Songyong Liu , Weiwei Guo , Wei Chen , Houguang Liu

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Abstract

This study investigates the dynamic behavior of the stapes stimulated by a round-window stimulating active middle ear implant. Initially, a linear mechanical model of the implant coupled with the middle ear was validated using cadaver head experiments to establish baseline accuracy and ensure it reflects physiological conditions. Following validation, the linear stapes motion under implant stimulation was examined, offering insights into the influence of the implant's design parameters on the stapes' dynamic response. To address the mismatch between the round-window niche length and the actuator length, shape memory alloys were incorporated to develop a nonlinear mechanical model. While shape memory alloys enhance adaptability and accommodate patient-specific variations, they may also introduce nonlinear stiffness, which could lead to instability in system motion. To address this, the system behavior was analyzed across implant design parameters such as excitation voltage and coupling rod stiffness. The results indicate that with certain parameter configurations, the system exhibits significant subharmonic and chaotic motion. These findings emphasize the importance of optimizing the implant parameters to prevent undesirable aperiodic motion. Optimal design strategies were proposed to map the system's stable parameter region, improving implant stability and auditory compensation effectiveness. These findings demonstrate the feasibility of using shape memory alloys in round-window stimulation to accommodate anatomical variations. The developed mechanical coupling model offers valuable insights for enhancing the design of round-window stimulating implants.

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圆窗刺激性主动中耳植入体的耳动力建模与分析

本研究探讨了圆形窗口刺激活动中耳植入物刺激镫骨的动态行为。首先，使用尸体头部实验验证了植入物与中耳耦合的线性力学模型，以建立基线精度并确保其反映生理状况。验证后，研究了种植体刺激下镫骨的线性运动，从而深入了解了种植体设计参数对镫骨动态响应的影响。为了解决圆窗壁龛长度与致动器长度不匹配的问题，采用形状记忆合金建立了非线性力学模型。虽然形状记忆合金增强了适应性和适应患者特定的变化，但它们也可能引入非线性刚度，这可能导致系统运动不稳定。为了解决这个问题，研究人员分析了不同植入物设计参数（如激励电压和耦合杆刚度）下的系统行为。结果表明，在一定的参数配置下，系统表现出明显的次谐波和混沌运动。这些发现强调了优化种植体参数以防止不良非周期运动的重要性。提出了优化设计策略，以映射系统的稳定参数区域，提高植入物的稳定性和听觉补偿效果。这些发现证明了在圆窗刺激中使用形状记忆合金以适应解剖变化的可行性。所建立的力学耦合模型为改进圆窗刺激种植体的设计提供了有价值的见解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...