Study of physical properties of novel perovskite FrJCl3 (J = Be, Mg) materials: DFT predictions for photovoltaic applications

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Shoukat Hussain, Abhinav Kumar, Soumaya Gouadria, Jayanti Makasana, Suhas Ballal, Karthikeyan Jayabalan, Premananda Pradhan, Bhavik Jain, Tushar Aggarwal, Jalil Ur Rehman
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引用次数: 0

Abstract

Perovskites have attracted a lot of interest due to their potential use in solar cells and alternative forms of energy. This study uses Density Functional Theory based Generalized Gradient Approximations and Perdew Burke Ernzerhof (GGA-PBE) simulations to examine the thermodynamic, optoelectronic, and physical aspects of FrJCl3 (J = Be, Mg). The tolerance factor (Tf = 1.17, 1.04), formation energy (Hf = − 3.397, − 3.511) eV/atoms, cohesive energy (CE = − 3.397, − 3.511) eV/atoms, and Born-stability (Cij > 0) criteria ascertained by examining the elastic constants were used to examine the stability of the substances. According to calculations, the substances’ bandgaps Eg are 1.71 and 3.81 eV which confirm the semiconductor nature. Various optical factors are used to describe the origin of optical nature. At 12.20 eV and 12.31 eV, respectively, the determined values of the conductivity FrJCl3 (J = Be, Mg) that produce the best results are 6.36 1/fs and 5.82 1/fs. For FrJCl3 (J = Be, Mg), the highest values of α (ω) are 347,255.23 cm−1 (14.12 eV) and 367,402.37 cm−1 (14.41 eV), accordingly. The possibility of optoelectronic devices is increased when the absorption spectra change from the visible to the ultraviolet (UV) range. The compounds’ thermodynamic characteristics make them suitable for possible application in the production of thermoelectric devices. The thermodynamic stability is indicated by the predicted negative (-ve) values and the decreasing tendency of the energy at temperature (0.0–1000.0) K and pressure 0.0 GPa. Current materials are suited for energy-harvesting gadgets such as photovoltaic and optoelectronic applications.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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