Debonding interface effect and multi-field coupling of a thin piezoelectric semiconductor film bonded to elastic substrate

IF 5.7 1区工程技术 Q1 ENGINEERING, CIVIL

Thin-Walled Structures Pub Date : 2025-04-08 DOI:10.1016/j.tws.2025.113288

Xue-Qian Fang , Gao-Lei Dong

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引用次数: 0

Abstract

Piezoelectric semiconductor films possess moderate stiffness, excellent piezoelectric and semiconductor behavior and have great potential application in Micro Electromechanical Systems. To enhance the piezoelectric semiconductor property and interface strength, a theoretical model of a thin piezoelectric semiconductor film bonded to elastic substrate with debonded interface is established, and the stress and coupling fields in the piezoelectric semiconductor film and elastic substrate subjected to electric field are derived. Based on the fundamental solutions of the elastic substrate and piezoelectric semiconductor film, the governing integro-differential equations of the model are investigated and numerically solved. The interfacial stresses with perfect and imperfect bonding are obtained, and the effect of piezoelectric semiconductor film on the interface response is analyzed. It is found that the interfacial shear and normal stresses are quite related to the length-thicknes ratios, material parameters, initial electron concentrations. Some methods of manipulating the interface strength of piezoelectric semiconductor films are presented. Comparison with existing results validates the solving method in this paper.

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弹性衬底上的薄压电半导体薄膜的脱粘界面效应和多场耦合

压电半导体薄膜具有刚度适中、优异的压电和半导体性能，在微机电系统中具有很大的应用潜力。为了提高压电半导体的性能和界面强度，建立了具有剥离界面的压电半导体薄膜与弹性衬底结合的理论模型，推导了电场作用下压电半导体薄膜与弹性衬底的应力场和耦合场。基于弹性衬底和压电半导体薄膜的基本解，研究了模型的控制积分微分方程，并进行了数值求解。得到了完全键合和不完全键合的界面应力，并分析了压电半导体薄膜对界面响应的影响。界面剪应力和正应力与长厚比、材料参数、初始电子浓度有很大关系。介绍了几种控制压电半导体薄膜界面强度的方法。通过与已有结果的比较，验证了本文的求解方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Thin-Walled Structures 工程技术-工程：土木

CiteScore

9.60

自引率

20.30%

发文量

801

审稿时长

66 days

期刊介绍： Thin-walled structures comprises an important and growing proportion of engineering construction with areas of application becoming increasingly diverse, ranging from aircraft, bridges, ships and oil rigs to storage vessels, industrial buildings and warehouses. Many factors, including cost and weight economy, new materials and processes and the growth of powerful methods of analysis have contributed to this growth, and led to the need for a journal which concentrates specifically on structures in which problems arise due to the thinness of the walls. This field includes cold– formed sections, plate and shell structures, reinforced plastics structures and aluminium structures, and is of importance in many branches of engineering. The primary criterion for consideration of papers in Thin–Walled Structures is that they must be concerned with thin–walled structures or the basic problems inherent in thin–walled structures. Provided this criterion is satisfied no restriction is placed on the type of construction, material or field of application. Papers on theory, experiment, design, etc., are published and it is expected that many papers will contain aspects of all three.