Highly transparent β-Ga2O3/NiO heterojunction-based photovoltaic solar-blind photo-communication window

IF 4.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2025-04-07 DOI:10.1016/j.sna.2025.116553

Sourov Hossain , Shuvaraj Ghosh , Junghyun Lee , Chanhyuk Choi , Malkeshkumar Patel , Donggun Lim , Joondong Kim

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引用次数: 0

Abstract

Developing high-performance, deep-ultraviolet (DUV) devices that are invisible to the human eye is imperative for advancing next-generation transparent electronics. This work introduces a novel photovoltaic-integrated transparent photodetector (TPD) based on a Ga₂O₃/NiO heterojunction. The wide bandgap of n-Ga₂O₃ (∼4.5 eV) allows the heterojunction to effectively absorb DUV photons while remaining insensitive to longer wavelength photons. The p-type NiO provides a well-matched bandgap and suitable work function for fabricating a type II heterojunction, which enhances the efficient extraction of charge carriers at the interface. The valence band offset and a large built-in potential at the heterointerface provide advantageous energetics for separating and migrating photogenerated excitons, making it particularly useful for self-powered, solar-blind UV photodetection. Transparent silver nanowires electrodes are employed to ensure the device remains completely invisible to the human eye. The self-powered functionality eliminates the need for an external bias, simplifying device integration. The fabricated Ga₂O₃/NiO heterojunction-based transparent photovoltaic device exhibits an open-circuit value of 639 mV under DUV illumination, with an average visible transparency of 65 %. The TPD exhibits a fast photoresponse with a response time of 30 µs. Furthermore, we demonstrate an online real-time photo-communication monitoring application based on this device, as well as a wide-field-of-view for solar-blind photo-communication. The device's transparency and omnidirectional behavior pave the way for its use in various optoelectronic applications, including artificial intelligence eyes, wide-field-of-view cameras and antennas, solar-blind imaging, and more.

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...