Nanoshell-type semiconductor structures are essential for designing high-performance integrated electronic devices, such as sensing and energy harvesting. In this study, we apply modified couple stress and flexoelectric theories to perform a size-dependent structural analysis of flexoelectric semiconductor (FS) curved nanoshells. A two-dimensional theory for an arbitrary orthogonal curvilinear coordinate system is derived from the three-dimensional macroscopic theory of flexoelectric semiconductors by using the Kirchhoff–Love shell theory. A combination of physical and geometric parameters is introduced to measure the strength of the coupling between mechanical loads and the redistribution of charge carriers. A trigonometric series solution is obtained for a simply supported rectangular shell structure subjected to a localized normal mechanical load, revealing the concentration of mobile charges and the formation of electrical potential barriers near the loading area. These results are fundamental for the mechanical manipulation of mobile carrier transport in such shell structures. The results indicate that the FS curved nanoshell structure facilitates the redistribution of mobile carriers, correlating with an increase in electrical potential. This work serves as a starting point for understanding the significance of geometric structure on flexoelectric coupling and carrier transport, providing an effective approach to address issues related to nanoscale shell structures in multi-physical field coupling.