Ultra-scaled 55 nm InAlN/InGaN/GaN/AlGaN HEMT on β-Ga2O3 substrate: A TCAD-Based performance analysis for high-frequency power applications

Abstract

We present a comprehensive TCAD simulation study of an ultra-scaled InAlN/InGaN/GaN/AlGaN High Electron Mobility Transistor (HEMT on β-Ga₂O₃ substrate. The novel device architecture, incorporating a 55 nm gate length, addresses key challenges in wide-bandgap semiconductor integration while achieving superior performance metrics. Our simulation results demonstrate exceptional DC characteristics, including a maximum drain current density of 5.5 A/mm and ON-resistance of 9.23 Ω mm. The device exhibits remarkable electrostatic control with an I_ON/I_OFF ratio exceeding 10¹³ and peak transconductance of 0.77 S/mm. Three-terminal breakdown voltage simulations confirm robust operation up to 55 V. Through optimized parasitic management and short-channel effect mitigation, the device achieves cutting-edge radio frequency performance with f_T/f_max of 274/285 GHz. These results establish the potential of InAlN-based HEMTs on β-Ga₂O₃ substrates for next-generation high-frequency power applications.