Exploring the growth and optoelectronic properties of PtSe2 films via pulsed chemical vapor deposition

Abstract

Two-dimensional (2D) layered materials exhibit remarkable potential for electronic, photoelectronic and catalytic applications due to their unique layer-dependent physical properties. Among these materials, platinum diselenide (PtSe₂) has superior characteristics such as high carrier mobility, a widely tunable band gap, and excellent stability, making it a promising candidate for optoelectronic devices. However, an efficient and scalable synthesis method for high-quality PtSe₂ is still lacking. Herein, we report the synthesis of large-scale PtSe₂ thin films via pulsed chemical vapor deposition (P-CVD). In the P-CVD process, adequate selenization during the precursor interruption time enables the production of high-quality PtSe₂ films with a Pt:Se atomic ratio close to 1:2, compared to the conventional CVD method. Additionally, we investigate the lateral and vertical growth modes of PtSe₂ controlled by the Ar flow rate. The fabricated P-CVD PtSe₂ photodetector exhibits enhanced performance at 940 nm, with a responsivity of 6.4 and 14.1 mA/W and response times of 75/78 ms and 181/182 ms for films grown at 50 and 200 sccm, respectively. These findings provide insights into the growth behavior of P-CVD PtSe₂ depending on the Ar flow rate and demonstrate its photodetector characteristics in the near-infrared range.