Shijie Jia, Jiajia Liao, Qiong Yang, Renci Peng, Junhui Wang, Fei Yan, Shubin Wen, Zhipeng Wang, Jin Huang, Keyu Bao, Xuanling Liu, Min Liao, Jie Jiang, Yichun Zhou
{"title":"Developing HZO-Based Superlattices to Enhance Fatigue-Resistance by Charge Injection Suppression","authors":"Shijie Jia, Jiajia Liao, Qiong Yang, Renci Peng, Junhui Wang, Fei Yan, Shubin Wen, Zhipeng Wang, Jin Huang, Keyu Bao, Xuanling Liu, Min Liao, Jie Jiang, Yichun Zhou","doi":"10.1002/adfm.202501470","DOIUrl":null,"url":null,"abstract":"The HfO<sub>2</sub>-based ferroelectric thin films exhibit strong scalability and compatibility with complementary metal-oxide-semiconductor technology, rapidly promoting the development of ferroelectric memories. However, the inevitable breakdown-associated fatigue failure caused by charge injection poses a serious limitation on high-reliable HfO<sub>2</sub>-based ferroelectric memories. By constructing an HZO-ZrO<sub>2</sub> ferroelectric superlattice to achieve fast switching and a low depolarization field, both the duration and intensity of charge injection are reduced during polarization switching. Thus, the charge injection effect during polarization switching is effectively suppressed, resulting in the enhanced endurance of over 10<sup>12</sup> cycles. Furthermore, the semi-quantitative calculation method is constructed to evaluate the influence of charge injection on endurance performance. This work provides a strategy and perspective to achieve fatigue-resistance HfO<sub>2</sub>-based ferroelectric memories.","PeriodicalId":112,"journal":{"name":"Advanced Functional Materials","volume":"75 1","pages":""},"PeriodicalIF":18.5000,"publicationDate":"2025-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Functional Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/adfm.202501470","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
The HfO2-based ferroelectric thin films exhibit strong scalability and compatibility with complementary metal-oxide-semiconductor technology, rapidly promoting the development of ferroelectric memories. However, the inevitable breakdown-associated fatigue failure caused by charge injection poses a serious limitation on high-reliable HfO2-based ferroelectric memories. By constructing an HZO-ZrO2 ferroelectric superlattice to achieve fast switching and a low depolarization field, both the duration and intensity of charge injection are reduced during polarization switching. Thus, the charge injection effect during polarization switching is effectively suppressed, resulting in the enhanced endurance of over 1012 cycles. Furthermore, the semi-quantitative calculation method is constructed to evaluate the influence of charge injection on endurance performance. This work provides a strategy and perspective to achieve fatigue-resistance HfO2-based ferroelectric memories.
期刊介绍:
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