{"title":"Advanced photodetector for hybrid PET-MRI systems.","authors":"K Isayev, O Rasulov, N Sadigova","doi":"10.12688/openreseurope.18695.2","DOIUrl":null,"url":null,"abstract":"<p><strong>Background: </strong>Currently, a wide variety of silicon photomultipliers (SiPMs) are available, each designed for specific applications in fields such as science, medicine, and industry. Advances in production technology have led to the development of more sensitive and efficient photodiodes, which are critical for applications requiring precision, such as medical imaging.</p><p><strong>Methods: </strong>A research group has been working on designing a highly sensitive photodiode to enhance the capabilities of next-generation of hybrid positron emission tomography (PET) and magnetic resonance imaging (MRI) scanners. This involves integrating micropixel avalanche photodiodes (MAPDs) to improve image resolution. The chosen design features deep-immersion MAPDs with a pixel size of 12 microns and a density of 1000 pixels per mm <sup>2</sup>, allowing for high-detail photon detection. The 4x4 mm <sup>2</sup> active area is optimized to balance sensitivity and size for high-resolution medical imaging. To produce these photodiodes, the group has outlined a production plan involving 300 mm silicon wafers grown using multiple techniques to enhance material properties. The Malaysian Institute of Microelectronic Systems (MIMOS), renowned for its expertise in optical microelectronics, was selected as the production center. With MIMOS' state-of-the-art facilities, the project aims to meet stringent medical diagnostics standards.</p><p><strong>Results: </strong>The experimental results demonstrated that the MAPD-3NM (MAPD design with 12 microns pixel size) photodiode achieved an amplification factor 1.8 times greater than the MAPD-3NK (MAPD design with 10 microns pixel size) under optimal conditions. The both samples size was 4x4 square mm. Its overvoltage range increased by 100%, reaching 4 V, enhancing photon detection and amplification. The MAPD-3NM also showed a significant reduction in dark current, about 3.5 times lower than the MAPD-3NK, improving performance in low-light environments. Additionally, the MAPD-3NM had a capacitance of 200 pF compared to 176 pF for the MAPD-3NK, contributing to its superior performance. These improvements make the MAPD-3NM more efficient and sensitive for scientific and medical applications.</p><p><strong>Conclusions: </strong>This project represents a major advancement in photodetector technology for medical diagnostics, aiming to develop more accurate and efficient PET-MRI scanners that enhance patient outcomes with improved imaging capabilities.</p>","PeriodicalId":74359,"journal":{"name":"Open research Europe","volume":"4 ","pages":"247"},"PeriodicalIF":0.0000,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11973626/pdf/","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Open research Europe","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.12688/openreseurope.18695.2","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2024/1/1 0:00:00","PubModel":"eCollection","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Background: Currently, a wide variety of silicon photomultipliers (SiPMs) are available, each designed for specific applications in fields such as science, medicine, and industry. Advances in production technology have led to the development of more sensitive and efficient photodiodes, which are critical for applications requiring precision, such as medical imaging.
Methods: A research group has been working on designing a highly sensitive photodiode to enhance the capabilities of next-generation of hybrid positron emission tomography (PET) and magnetic resonance imaging (MRI) scanners. This involves integrating micropixel avalanche photodiodes (MAPDs) to improve image resolution. The chosen design features deep-immersion MAPDs with a pixel size of 12 microns and a density of 1000 pixels per mm 2, allowing for high-detail photon detection. The 4x4 mm 2 active area is optimized to balance sensitivity and size for high-resolution medical imaging. To produce these photodiodes, the group has outlined a production plan involving 300 mm silicon wafers grown using multiple techniques to enhance material properties. The Malaysian Institute of Microelectronic Systems (MIMOS), renowned for its expertise in optical microelectronics, was selected as the production center. With MIMOS' state-of-the-art facilities, the project aims to meet stringent medical diagnostics standards.
Results: The experimental results demonstrated that the MAPD-3NM (MAPD design with 12 microns pixel size) photodiode achieved an amplification factor 1.8 times greater than the MAPD-3NK (MAPD design with 10 microns pixel size) under optimal conditions. The both samples size was 4x4 square mm. Its overvoltage range increased by 100%, reaching 4 V, enhancing photon detection and amplification. The MAPD-3NM also showed a significant reduction in dark current, about 3.5 times lower than the MAPD-3NK, improving performance in low-light environments. Additionally, the MAPD-3NM had a capacitance of 200 pF compared to 176 pF for the MAPD-3NK, contributing to its superior performance. These improvements make the MAPD-3NM more efficient and sensitive for scientific and medical applications.
Conclusions: This project represents a major advancement in photodetector technology for medical diagnostics, aiming to develop more accurate and efficient PET-MRI scanners that enhance patient outcomes with improved imaging capabilities.