High Electromechanical Coupling Radial Extension Mode Resonators Realized in Al0.7Sc0.3N

IF 2.5 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Xu Zhao;Rossiny Beaucejour;Xingyu Du;Abhay Kochhar;Mojtaba Hodjat-Shamami;Craig Moe;Ramakrishna Vetury;Roy H. Olsson
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引用次数: 0

Abstract

This work reports aluminum scandium nitride (Al $_{\mathrm {1-x}}$ ScxN/AlScN) (x =0.3/Al0.7Sc0.3N) Lamb wave resonators (LWR) operating in length extensional (LE), width extensional (WE), and radial extensional (RE) modes. COMSOL Multiphysics and experimental measurements show that the RE mode achieves a much higher electromechanical coupling, $k_{t}^{2}$ , when compared to the more traditionally utilized LE and WE modes. The higher ${k} _{t}^{2}$ is due to the constructive addition of the $d_{31}$ and $d_{32}$ piezoelectric coefficients due to the RE mode shape. Experimentally, the RE mode resonator achieved a $k_{t}^{2}$ of 14.1%, which was much larger than the $k_{t}^{2}$ of 9.1% and 4.8% measured for the WE and LE mode devices fabricated on the same wafer. The RE mode achieves a high $Q_{p}$ of 1302 measured in air yielding a figure-of-merit (FOM $= k_{t}^{2}Q_{p}$ ) of 157. Based on the high $k_{t}^{2}$ and FOM, Al0.7Sc0.3N-based RE resonators show potential for applications in piezoelectric microelectromechanical filters and oscillators. [2024-0231]
在 Al0.7Sc0.3N 中实现高机电耦合径向扩展模式谐振器
本文报道了氮化铝钪(Al $_{\mathrm {1-x}}$ ScxN/AlScN) (x =0.3/Al0.7Sc0.3N)兰姆波谐振器(LWR)在长度扩展(LE)、宽度扩展(WE)和径向扩展(RE)模式下工作。COMSOL多物理场和实验测量表明,与传统的LE和WE模式相比,RE模式实现了更高的机电耦合,$k_{t}^{2}$。较高的${k} _{t}^{2}$是由于$d_{31}$和$d_{32}$压电系数由于RE模态振型的建设性添加。实验,再保险模式谐振器实现美元k_ {t} ^{2} 14.1%的美元,这比美元更大的k_ {t} ^{2} $ 9.1%和4.8%的测量对于我们和LE模式设备在同一晶片制作的。RE模式在空气中获得了1302的高Q_{p}$,从而产生157的品质系数(FOM $= k_{t}^{2}Q_{p}$)。基于高$k_{t}^{2}$和FOM,基于al0.7 sc0.3 n的稀土谐振器显示出在压电微机电滤波器和振荡器中的应用潜力。(2024 - 0231)
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来源期刊
Journal of Microelectromechanical Systems
Journal of Microelectromechanical Systems 工程技术-工程:电子与电气
CiteScore
6.20
自引率
7.40%
发文量
115
审稿时长
7.5 months
期刊介绍: The topics of interest include, but are not limited to: devices ranging in size from microns to millimeters, IC-compatible fabrication techniques, other fabrication techniques, measurement of micro phenomena, theoretical results, new materials and designs, micro actuators, micro robots, micro batteries, bearings, wear, reliability, electrical interconnections, micro telemanipulation, and standards appropriate to MEMS. Application examples and application oriented devices in fluidics, optics, bio-medical engineering, etc., are also of central interest.
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