A broadband high gain driver amplifier with gain compensation for current-reuse

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2025-04-07 DOI:10.1016/j.mejo.2025.106673

Tingwei Gong, Zhiqun Cheng, Xuefei Xuan, Chao Le, Zhiwei Zhang, Daopeng Li, Bangjie Zheng

{"title":"A broadband high gain driver amplifier with gain compensation for current-reuse","authors":"Tingwei Gong, Zhiqun Cheng, Xuefei Xuan, Chao Le, Zhiwei Zhang, Daopeng Li, Bangjie Zheng","doi":"10.1016/j.mejo.2025.106673","DOIUrl":null,"url":null,"abstract":"<div><div>This paper proposes a broadband high-gain driver amplifier (DA) monolithic microwave integrated circuit (MMIC) for wireless communication. Current reuse and a new gain compensation method are applied in the design of proposed DA MMIC to achieve the performance of high gain, low in-band gain ripple, and high output power across a wide operational bandwidth. To ensure the power capability, both the output stage and the driver stage are designed based on load-pull analysis, which inevitably results in gain non-uniformity. However, with the application of the proposed gain compensation method to the first-stage amplification circuit, the gain non-uniformity of both the driver and output stages is ultimately compensated for. For verification, the proposed DA is fabricated in 0.15 μm gallium arsenide (GaAs) high electron mobility transistor (pHEMT) technology with a chip area of 4.2 mm<sup>2</sup>. The measured results demonstrate a small signal gain over 32 dB, a saturated output power over 26 dBm, a power gain greater than 30 dB, an power added efficiency (PAE) exceeding 25 %, and in-band gain ripple of approximately ±0.8 dB from 2 to 18 GHz. The proposed DA MMIC has a static power consumption of 0.95 W and dynamic power consumption less than 1.3 W.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"160 ","pages":"Article 106673"},"PeriodicalIF":1.9000,"publicationDate":"2025-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1879239125001225","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

This paper proposes a broadband high-gain driver amplifier (DA) monolithic microwave integrated circuit (MMIC) for wireless communication. Current reuse and a new gain compensation method are applied in the design of proposed DA MMIC to achieve the performance of high gain, low in-band gain ripple, and high output power across a wide operational bandwidth. To ensure the power capability, both the output stage and the driver stage are designed based on load-pull analysis, which inevitably results in gain non-uniformity. However, with the application of the proposed gain compensation method to the first-stage amplification circuit, the gain non-uniformity of both the driver and output stages is ultimately compensated for. For verification, the proposed DA is fabricated in 0.15 μm gallium arsenide (GaAs) high electron mobility transistor (pHEMT) technology with a chip area of 4.2 mm². The measured results demonstrate a small signal gain over 32 dB, a saturated output power over 26 dBm, a power gain greater than 30 dB, an power added efficiency (PAE) exceeding 25 %, and in-band gain ripple of approximately ±0.8 dB from 2 to 18 GHz. The proposed DA MMIC has a static power consumption of 0.95 W and dynamic power consumption less than 1.3 W.

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.