Are There High-Density Deep States in an Atomic-Layer-Deposited Indium–Gallium–Zinc Oxide Thin Film?

IF 9.1 1区材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY

Nano Letters Pub Date : 2025-03-31 DOI:10.1021/acs.nanolett.5c0167310.1021/acs.nanolett.5c01673

Liankai Zheng, Lijuan Xing, Zhiyu Lin, Wanpeng Zhao, Yuyan Fan, Yulong Dong, Ziheng Wang, Siying Li, Xiuyan Li, Ying Wu*, Jeffrey Xu and Mengwei Si*,

{"title":"Are There High-Density Deep States in an Atomic-Layer-Deposited Indium–Gallium–Zinc Oxide Thin Film?","authors":"Liankai Zheng, Lijuan Xing, Zhiyu Lin, Wanpeng Zhao, Yuyan Fan, Yulong Dong, Ziheng Wang, Siying Li, Xiuyan Li, Ying Wu*, Jeffrey Xu and Mengwei Si*, ","doi":"10.1021/acs.nanolett.5c0167310.1021/acs.nanolett.5c01673","DOIUrl":null,"url":null,"abstract":"It has been well recognized that high-density deep states exist in indium–gallium–zinc oxide (IGZO) thin films. Many of the device characteristics of IGZO transistors, such as negative bias illumination stability (NBIS), are understood to be related to these deep states. However, in this work, it was found that the deep-state density (NtD) of atomic-layer-deposited (ALD) IGZO transistors can be an ultralow value (<2.3 × 1012/cm3) by the proposed NBIS-free light-assisted I–V measurements so that the deep states do not affect the I–V characteristics even in the subthreshold region. This work also reveals that NBIS is not related to the photoexcitation of electrons in the deep states. Our results suggest that the existence of deep states and the impact of deep states on ALD IGZO transistors may need to be revisited.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"25 14","pages":"5974–5980 5974–5980"},"PeriodicalIF":9.1000,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nano Letters","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acs.nanolett.5c01673","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}

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Abstract

It has been well recognized that high-density deep states exist in indium–gallium–zinc oxide (IGZO) thin films. Many of the device characteristics of IGZO transistors, such as negative bias illumination stability (NBIS), are understood to be related to these deep states. However, in this work, it was found that the deep-state density (N_tD) of atomic-layer-deposited (ALD) IGZO transistors can be an ultralow value (<2.3 × 10¹²/cm³) by the proposed NBIS-free light-assisted I–V measurements so that the deep states do not affect the I–V characteristics even in the subthreshold region. This work also reveals that NBIS is not related to the photoexcitation of electrons in the deep states. Our results suggest that the existence of deep states and the impact of deep states on ALD IGZO transistors may need to be revisited.

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原子层沉积的铟镓锌氧化物薄膜是否存在高密度深态？

铟镓锌氧化物（IGZO）薄膜中存在高密度深态。IGZO晶体管的许多器件特性，如负偏置照明稳定性（NBIS），都被认为与这些深态有关。然而，在这项工作中，通过提出的无nbis光辅助I-V测量，发现原子层沉积（ALD） IGZO晶体管的深态密度（NtD）可以达到超低值（<2.3 × 1012/cm3），因此即使在亚阈值区域，深态也不会影响I-V特性。这项工作还揭示了NBIS与电子在深态的光激发无关。我们的结果表明，深态的存在以及深态对ALD IGZO晶体管的影响可能需要重新审视。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Nano Letters 工程技术-材料科学：综合

CiteScore

16.80

自引率

2.80%

发文量

1182

审稿时长

1.4 months

期刊介绍： Nano Letters serves as a dynamic platform for promptly disseminating original results in fundamental, applied, and emerging research across all facets of nanoscience and nanotechnology. A pivotal criterion for inclusion within Nano Letters is the convergence of at least two different areas or disciplines, ensuring a rich interdisciplinary scope. The journal is dedicated to fostering exploration in diverse areas, including: - Experimental and theoretical findings on physical, chemical, and biological phenomena at the nanoscale - Synthesis, characterization, and processing of organic, inorganic, polymer, and hybrid nanomaterials through physical, chemical, and biological methodologies - Modeling and simulation of synthetic, assembly, and interaction processes - Realization of integrated nanostructures and nano-engineered devices exhibiting advanced performance - Applications of nanoscale materials in living and environmental systems Nano Letters is committed to advancing and showcasing groundbreaking research that intersects various domains, fostering innovation and collaboration in the ever-evolving field of nanoscience and nanotechnology.