Outside Front Cover: Low Temperature Atomic Layer Deposition of (00l)-Oriented Elemental Bismuth (Angew. Chem. 15/2025)

Angewandte Chemie Pub Date : 2025-03-25 DOI:10.1002/ange.202506105

Jorge Luis Vazquez Arce, Alessio Amoroso, Nicolas Perez, Jaroslav Charvot, Dominik Naglav Hansen, Panpan Zhao, Jun Yang, Sebastian Lehmann, Angelika Wrzesińska Lashkova, Fabian Pieck, Ralf Tonner Zech, Filip Bureš, Annalisa Acquesta, Yana Vaynzof, Anjana Devi, Kornelius Nielsch, Amin Bahrami

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Abstract

The first successful growth of elemental bismuth (Bi) thin films via thermal atomic layer deposition (ALD) using Bi(NMe₂)₃ and Sb(SiMe₃)₃ is reported by Kornelius Nielsch, Amin Bahrami et al. in their Research Article (e202422578) As depicted on the cover picture, the films evolve from island formation to full coverage, accompanied by a preferential growth shift from the (012) to the (003) plane. The resulting films exhibit semimetallic behavior with a resistivity of approximately 200 µΩ·cm. Artwork by the team of INMYWORK Studio.

Abstract Image

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外封面：（00l）取向元素铋的低温原子层沉积。化学15/2025)

Kornelius Nielsch， Amin Bahrami等人在他们的研究文章（e202422578）中首次报道了利用Bi(NMe2)3和Sb(SiMe3)3通过热原子层沉积（ALD）成功生长单质铋（Bi）薄膜。如图所示，薄膜从岛状形成到全覆盖，伴随着从（012）平面到（003）平面的优先生长转移。所得薄膜表现出半金属性质，电阻率约为200µΩ·cm。艺术品由INMYWORK工作室团队制作。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Angewandte Chemie 化学科学, 有机化学, 有机合成

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0.00%

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审稿时长

1 months