A DFT study on mechanisms of indium absorption in sphalerite (100), (110), and (111) surfaces: Implications for critical metal mineralization

IF 3.2 2区 地球科学 Q1 GEOLOGY
Fan Xiao , Zongcong He , Yi Zheng , Suofei Xiong , Qiuming Cheng
{"title":"A DFT study on mechanisms of indium absorption in sphalerite (100), (110), and (111) surfaces: Implications for critical metal mineralization","authors":"Fan Xiao ,&nbsp;Zongcong He ,&nbsp;Yi Zheng ,&nbsp;Suofei Xiong ,&nbsp;Qiuming Cheng","doi":"10.1016/j.oregeorev.2025.106572","DOIUrl":null,"url":null,"abstract":"<div><div>As an important critical metal, indium (In) enters sphalerite through isomorphous substitution of Zn. Regarding crystallography and chemical kinetics, In adsorption in sphalerite surfaces is a key factor controlling its occurrence in sphalerite, because this is a prerequisite for triggering the substitution process. Nevertheless, mechanisms of In absorption in sphalerite surfaces remain ambiguous, which hinders our understanding of the physicochemical conditions for forming In-bearing sphalerite. Thus, we employed the first-principles calculations method based on density functional theory to investigate the structural characteristics of the three primary sphalerite surfaces, namely (100), (110), and (111), under In adsorption. As an illustrating purpose, we addressed the substitution process of In<sup>3+</sup> + Cu<sup>+</sup> → 2Zn<sup>2+</sup>, one of the most common and important substitution mechanisms for forming In-bearing sphalerite in natural mineralization. We calculated the adsorption energy and electronic structure of In<sup>3+</sup> and In<sup>3+</sup>–Cu<sup>+</sup> adsorption in the sphalerite (100), (110), and (111) surfaces, respectively. The results suggest that the (111) surface is notably the most conducive to In entering sphalerite, attributed to the low adsorption energy for both In<sup>3+</sup> and In<sup>3+</sup>–Cu<sup>+</sup> onto it. Cu<sup>+</sup> enhances In<sup>3+</sup> adsorption in the sphalerite surfaces due to it significantly reduces the adsorption energy. The considerable differences in the electronic structures of the three sphalerite surfaces restrict the charge transfer between In<sup>3+</sup> and other atoms present, ultimately controlling their In adsorption behaviors. This analysis sheds light on the variations in the In<sup>3+</sup> adsorption processes on the sphalerite (100), (110), and (111) surfaces at an atomic level. It offers a deep understanding of the mechanisms driving the formation of In-bearing sphalerite, especially in the context of critical metal mineralization.</div></div>","PeriodicalId":19644,"journal":{"name":"Ore Geology Reviews","volume":"181 ","pages":"Article 106572"},"PeriodicalIF":3.2000,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ore Geology Reviews","FirstCategoryId":"89","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0169136825001325","RegionNum":2,"RegionCategory":"地球科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"GEOLOGY","Score":null,"Total":0}
引用次数: 0

Abstract

As an important critical metal, indium (In) enters sphalerite through isomorphous substitution of Zn. Regarding crystallography and chemical kinetics, In adsorption in sphalerite surfaces is a key factor controlling its occurrence in sphalerite, because this is a prerequisite for triggering the substitution process. Nevertheless, mechanisms of In absorption in sphalerite surfaces remain ambiguous, which hinders our understanding of the physicochemical conditions for forming In-bearing sphalerite. Thus, we employed the first-principles calculations method based on density functional theory to investigate the structural characteristics of the three primary sphalerite surfaces, namely (100), (110), and (111), under In adsorption. As an illustrating purpose, we addressed the substitution process of In3+ + Cu+ → 2Zn2+, one of the most common and important substitution mechanisms for forming In-bearing sphalerite in natural mineralization. We calculated the adsorption energy and electronic structure of In3+ and In3+–Cu+ adsorption in the sphalerite (100), (110), and (111) surfaces, respectively. The results suggest that the (111) surface is notably the most conducive to In entering sphalerite, attributed to the low adsorption energy for both In3+ and In3+–Cu+ onto it. Cu+ enhances In3+ adsorption in the sphalerite surfaces due to it significantly reduces the adsorption energy. The considerable differences in the electronic structures of the three sphalerite surfaces restrict the charge transfer between In3+ and other atoms present, ultimately controlling their In adsorption behaviors. This analysis sheds light on the variations in the In3+ adsorption processes on the sphalerite (100), (110), and (111) surfaces at an atomic level. It offers a deep understanding of the mechanisms driving the formation of In-bearing sphalerite, especially in the context of critical metal mineralization.

Abstract Image

求助全文
约1分钟内获得全文 求助全文
来源期刊
Ore Geology Reviews
Ore Geology Reviews 地学-地质学
CiteScore
6.50
自引率
27.30%
发文量
546
审稿时长
22.9 weeks
期刊介绍: Ore Geology Reviews aims to familiarize all earth scientists with recent advances in a number of interconnected disciplines related to the study of, and search for, ore deposits. The reviews range from brief to longer contributions, but the journal preferentially publishes manuscripts that fill the niche between the commonly shorter journal articles and the comprehensive book coverages, and thus has a special appeal to many authors and readers.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信