Martin Rodrigo Tolosa, Manuel Villafuerte, Horacio Brizuela, Jorge Mario Ferreyra and German Bridoux*,
{"title":"Effects of Mechanical Bending on the Photoconducting and Luminescent Properties of Epitaxial ZnO Films","authors":"Martin Rodrigo Tolosa, Manuel Villafuerte, Horacio Brizuela, Jorge Mario Ferreyra and German Bridoux*, ","doi":"10.1021/acsaelm.5c0010010.1021/acsaelm.5c00100","DOIUrl":null,"url":null,"abstract":"<p >A study of the influence of mechanical bending on the electrical resistance, photoconductivity (PC), and photoluminescence (PL) of epitaxial ZnO films is presented. We have found a systematic decrease in the electrical resistance and of the energy gap extracted from the photoconductivity and photoluminescence spectra as the bending of the film is increased. From the photoconductivity spectra, it is also possible to extract the electric field present on the film, obtaining a systematic increase of this field as the bending of the film is increased in accordance with an increment of the induced polarization due to this applied flexion. This result suggests that the observed reduction in the effective energy gap can be due to the Franz–Keldysh effect.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 7","pages":"2660–2664 2660–2664"},"PeriodicalIF":4.3000,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsaelm.5c00100","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
A study of the influence of mechanical bending on the electrical resistance, photoconductivity (PC), and photoluminescence (PL) of epitaxial ZnO films is presented. We have found a systematic decrease in the electrical resistance and of the energy gap extracted from the photoconductivity and photoluminescence spectra as the bending of the film is increased. From the photoconductivity spectra, it is also possible to extract the electric field present on the film, obtaining a systematic increase of this field as the bending of the film is increased in accordance with an increment of the induced polarization due to this applied flexion. This result suggests that the observed reduction in the effective energy gap can be due to the Franz–Keldysh effect.
期刊介绍：
ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric.
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