Thermally Stable Edge-Functionalized Hexagonal Boron Nitride Quantum Dots for Blue Light Photodetector Applications

IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Debojyoti Ray Chawdhury, Shruti Narayanan, Sugandh Sirohi and Prem Ballabh Bisht*, 
{"title":"Thermally Stable Edge-Functionalized Hexagonal Boron Nitride Quantum Dots for Blue Light Photodetector Applications","authors":"Debojyoti Ray Chawdhury,&nbsp;Shruti Narayanan,&nbsp;Sugandh Sirohi and Prem Ballabh Bisht*,&nbsp;","doi":"10.1021/acsaelm.5c0029110.1021/acsaelm.5c00291","DOIUrl":null,"url":null,"abstract":"<p >Quantum dots (QDs) of hexagonal boron nitride (hBN) synthesized by using the bottom-up approach have been characterized. Significant red shift in the band gap of hBN QDs has been observed on functionalization. Due to better functionalizability, these QDs synthesized by the bottom-up method showed superior blue emission (∼20 times) as compared to the ones obtained by the top-down method. The temperature dependence of the PL shows that the QDs are suitable for use in optoelectronic devices. This is due to their low thermal expansion coefficient, direct band gap, and high activation energy. As an application of this study, a photodetector at 405 nm on silicon (Si) substrate using a silver electrode has been demonstrated. The blue light photodetector shows a responsivity of 11 mA/W, external quantum efficiency of 3.4%, and detectivity of 1.5 × 10<sup>9</sup> Jones. The device with easy fabrication technique exhibits a faster photoresponse, making it suitable for optoelectronic devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 7","pages":"3104–3114 3104–3114"},"PeriodicalIF":4.3000,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsaelm.5c00291","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Quantum dots (QDs) of hexagonal boron nitride (hBN) synthesized by using the bottom-up approach have been characterized. Significant red shift in the band gap of hBN QDs has been observed on functionalization. Due to better functionalizability, these QDs synthesized by the bottom-up method showed superior blue emission (∼20 times) as compared to the ones obtained by the top-down method. The temperature dependence of the PL shows that the QDs are suitable for use in optoelectronic devices. This is due to their low thermal expansion coefficient, direct band gap, and high activation energy. As an application of this study, a photodetector at 405 nm on silicon (Si) substrate using a silver electrode has been demonstrated. The blue light photodetector shows a responsivity of 11 mA/W, external quantum efficiency of 3.4%, and detectivity of 1.5 × 109 Jones. The device with easy fabrication technique exhibits a faster photoresponse, making it suitable for optoelectronic devices.

Abstract Image

用于蓝光光电探测器的热稳定边缘功能化六方氮化硼量子点
采用自底向上的方法合成了六方氮化硼(hBN)量子点。在功能化过程中观察到hBN量子点的带隙有明显的红移。由于具有更好的功能化性,自下而上方法合成的量子点比自上而下方法合成的量子点具有更好的蓝色发射(~ 20倍)。量子点的温度依赖性表明,量子点适合用于光电器件。这是由于它们的热膨胀系数小,直接带隙大,活化能高。作为本研究的一个应用,在硅(Si)衬底上使用银电极的405 nm光探测器已经被证明。该蓝光光电探测器的响应率为11 mA/W,外量子效率为3.4%,探测率为1.5 × 109 Jones。该器件具有简单的制造技术,具有更快的光响应,适用于光电子器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
CiteScore
7.20
自引率
4.30%
发文量
567
期刊介绍: ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/​Abstracted: Web of Science SCIE Scopus CAS INSPEC Portico
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信