Inhibiting lattice strain for highly stable and long-life Li-rich Mn-based layered cathodes

IF 9.6 1区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Wen-Zhao Huang, Wei Wang, Xiao-La Li, Zi-Yang Liang, Bo-Yang Zhang, Chen-Yu Liu, Qi Liu, Zhan Lin, Dong Luo
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Abstract

The utilization of Li-rich layered oxides (LLOs) as cathodes in high-energy Li-ion batteries is significantly hindered by serious voltage decay and capacity fading due to irreversible oxygen release and transition metal (TM) migration triggered by the lattice strain. Herein, B ions are effectively incorporated into the tetrahedral vacancies situated between TM slab and Li layer of LLOs. The robust B-O bond, along with the low Bader charge of oxygen within BO4 tetrahedra, alleviates excessive oxidation of O anions while substantially reinforcing the oxygen framework. Consequently, the B-doped LLO sample exhibits only slight variation in lattice parameters, especially the c-axis, which can be characterized as exhibiting “zero-strain” as supported by in situ XRD data. As a result, the discharge capacity of the B-LLO sample maintains 210.66 mAh·g−1 after 300 cycles, with a retention ratio of 90.7%.

Graphical Abstract

抑制高稳定长寿命富锂锰基层状阴极的晶格应变
富锂层状氧化物(LLOs)作为高能锂离子电池阴极的应用受到晶格应变引发的不可逆氧释放和过渡金属(TM)迁移导致的严重电压衰减和容量衰退的严重阻碍。在本文中,B离子被有效地引入到LLOs中位于TM板和Li层之间的四面体空位中。强健的B-O键,以及BO4四面体中氧的低巴德电荷,减轻了O阴离子的过度氧化,同时大大加强了氧框架。因此,b掺杂LLO样品的晶格参数只有轻微的变化,特别是c轴,可以表征为“零应变”,正如原位XRD数据所支持的。结果表明,经过300次循环后,B-LLO样品的放电容量保持在210.66 mAh·g−1,保持率为90.7%。图形抽象
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来源期刊
Rare Metals
Rare Metals 工程技术-材料科学:综合
CiteScore
12.10
自引率
12.50%
发文量
2919
审稿时长
2.7 months
期刊介绍: Rare Metals is a monthly peer-reviewed journal published by the Nonferrous Metals Society of China. It serves as a platform for engineers and scientists to communicate and disseminate original research articles in the field of rare metals. The journal focuses on a wide range of topics including metallurgy, processing, and determination of rare metals. Additionally, it showcases the application of rare metals in advanced materials such as superconductors, semiconductors, composites, and ceramics.
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