Dependence of RF Sputtering Power on Structural and Electrical Properties of SnO2 Thin Films

IF 2 3区工程技术 Q2 ANATOMY & MORPHOLOGY

Microscopy Research and Technique Pub Date : 2025-01-07 DOI:10.1002/jemt.24759

Natasha Sajdeh, Seyed Ali Asghar Terohid, Somayeh Asgary, Ghobad Behzadi Pour

引用次数: 0

Abstract

SnO₂ thin films were deposited on Si substrates by radio frequency (RF) magnetron sputtering technique, and the effects of different sputtering power (60–90 W) on the structural, surface morphological, and electrical properties of the film were investigated with XRD, Raman, AFM, SEM, and fore point probe. The deposited SnO₂ film at lower RF was amorphous, while well-defined intense XRD signals at higher RF power indicated significant improvement in crystalline nature. E_g and A_1g vibrating modes related to SnO₂ were clearly observed in the Raman spectra. With the increasing RF sputtering power, the surface roughness of the films gradually increased while electrical resistivity revealed sharp decrease.

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射频溅射功率对SnO2薄膜结构和电学性能的影响

采用射频磁控溅射技术在Si衬底上沉积SnO2薄膜，采用XRD、Raman、AFM、SEM和前点探针研究了不同溅射功率（60 ~ 90 W）对薄膜结构、表面形貌和电学性能的影响。在较低RF下沉积的SnO2薄膜是无定形的，而在较高RF功率下清晰的强XRD信号表明，SnO2薄膜的结晶性质有了明显的改善。在拉曼光谱中清晰地观察到与SnO2相关的Eg和A1g振动模式。随着射频溅射功率的增大，薄膜表面粗糙度逐渐增大，电阻率急剧下降。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microscopy Research and Technique 医学-解剖学与形态学

CiteScore

5.30

自引率

20.00%

发文量

233

审稿时长

4.7 months

期刊介绍： Microscopy Research and Technique (MRT) publishes articles on all aspects of advanced microscopy original architecture and methodologies with applications in the biological, clinical, chemical, and materials sciences. Original basic and applied research as well as technical papers dealing with the various subsets of microscopy are encouraged. MRT is the right form for those developing new microscopy methods or using the microscope to answer key questions in basic and applied research.