{"title":"Enhanced high-temperature energy storage performance of COC by suppressing carrier transport","authors":"Yiwei Zhang, Jiaqi Zhang, Qiyue Zhang, Changhai Zhang, Tiandong Zhang, Yongquan Zhang, Yue Zhang, Qingguo Chi","doi":"10.1007/s10854-025-14671-9","DOIUrl":null,"url":null,"abstract":"<div><p>Polymer dielectric film capacitors serve as crucial energy storage devices in modern electronic systems. However, the conventional dielectric materials have high conduction loss at elevated temperature. Hence, we propose a synergistic regulation strategy based on molecular traps to improve the high-temperature energy storage performance of cyclic olefin copolymer (COC). Firstly, the polar group maleic anhydride (MAH) is introduced into the COC molecular chain through the structure design, which creates deep energy traps to suppress intrachain charge transport. Furthermore, the intermolecular charge trap is constructed by introducing molecular semiconductor PCBM, which has high electron affinity energy (2.6–2.8 eV), realizing the intramolecular and intermolecular charge transport co-inhibition. The results show that COC-g-MAH/PCBM-0.10 exhibits a maximum discharge energy density (<i>U</i><sub>e</sub>) of 4.47 J/cm<sup>3</sup> under 620 kV/mm at 120 ℃, and the efficiency (<i>η</i>) above 90%, which is 85% higher than COC. It’s noteworthy that at 120 ℃ and 500 kV/mm, after 50,000 charge–discharge cycles, the <i>η</i> of COC-g-MAH/PCBM-0.10 still remains at 92%, proving it has excellent high-temperature cycling stability. This strategy based on trap design provides a new paradigm for advanced dielectric materials with high energy storage performance and stability, demonstrating significant potential for practical applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 10","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14671-9","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Polymer dielectric film capacitors serve as crucial energy storage devices in modern electronic systems. However, the conventional dielectric materials have high conduction loss at elevated temperature. Hence, we propose a synergistic regulation strategy based on molecular traps to improve the high-temperature energy storage performance of cyclic olefin copolymer (COC). Firstly, the polar group maleic anhydride (MAH) is introduced into the COC molecular chain through the structure design, which creates deep energy traps to suppress intrachain charge transport. Furthermore, the intermolecular charge trap is constructed by introducing molecular semiconductor PCBM, which has high electron affinity energy (2.6–2.8 eV), realizing the intramolecular and intermolecular charge transport co-inhibition. The results show that COC-g-MAH/PCBM-0.10 exhibits a maximum discharge energy density (Ue) of 4.47 J/cm3 under 620 kV/mm at 120 ℃, and the efficiency (η) above 90%, which is 85% higher than COC. It’s noteworthy that at 120 ℃ and 500 kV/mm, after 50,000 charge–discharge cycles, the η of COC-g-MAH/PCBM-0.10 still remains at 92%, proving it has excellent high-temperature cycling stability. This strategy based on trap design provides a new paradigm for advanced dielectric materials with high energy storage performance and stability, demonstrating significant potential for practical applications.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.