Two- and three-dimensional electron imaging of beam-sensitive specimens

IF 2.2 3区工程技术 Q1 MICROSCOPY

Micron Pub Date : 2025-04-01 DOI:10.1016/j.micron.2025.103819

R.F. Egerton

引用次数: 0

Abstract

Radiation damage is the main factor that determines the spatial resolution of TEM and STEM images of beam-sensitive specimens, its influence being well represented by a dose-limited resolution (DLR). In this review, DLR is defined and evaluated for both thin and thick samples, for all common imaging modes, and for electron-accelerating voltages up to 3 MV. Damage mechanisms are discussed (including beam heating and electrostatic charge accumulation) with an emphasis on recently published work. Experimental methods for reducing beam damage are identified and future lines of investigation are suggested.

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光束敏感样品的二维和三维电子成像

辐射损伤是决定光束敏感样品TEM和STEM图像空间分辨率的主要因素，其影响可以用剂量限制分辨率（DLR）很好地表示。在这篇综述中，定义和评估了薄样品和厚样品的DLR，所有常见的成像模式，以及高达3 MV的电子加速电压。讨论了损伤机制（包括光束加热和静电电荷积累），重点介绍了最近发表的研究成果。确定了减少梁损伤的实验方法，并提出了今后的研究方向。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Micron 工程技术-显微镜技术

CiteScore

4.30

自引率

4.20%

发文量

100

审稿时长

31 days

期刊介绍： Micron is an interdisciplinary forum for all work that involves new applications of microscopy or where advanced microscopy plays a central role. The journal will publish on the design, methods, application, practice or theory of microscopy and microanalysis, including reports on optical, electron-beam, X-ray microtomography, and scanning-probe systems. It also aims at the regular publication of review papers, short communications, as well as thematic issues on contemporary developments in microscopy and microanalysis. The journal embraces original research in which microscopy has contributed significantly to knowledge in biology, life science, nanoscience and nanotechnology, materials science and engineering.