Boron-doped diamond as a functional semiconductive layer in chemiresistive sensors for the enhanced gas sensing of NO2 at room temperature

IF 4.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2025-03-28 DOI:10.1016/j.sna.2025.116525

Marina Davydova , Petr Ashcheulov , Alexandra Palla Papavlu , Alexandr Laposa , Andrew Taylor , Jiří Kroutil , Thomas Lippert

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引用次数: 0

Abstract

Nowadays chemiresistive gas sensors are viewed as fast, accurate, cheap, and effective instruments to monitor various hazardous air pollutants. However, most sensing materials currently used in such gas sensors require an activation step, in terms of additional thermal energy supplied to the sensing material, to achieve the necessary interaction between the sensing surface and the target gas molecule. In this work, the application of nanocrystalline boron-doped diamond (BDD) as the active layer/component in a chemiresistive gas sensor was investigated, focusing on the room-temperature operation of the gas sensor in the presence of oxidizing (NO₂, CO) and reducing (NH₃) gases. In contrast to previous reports using nanocrystalline diamond (NCD) as a gas sensing layer, the utilization of BDD layer eliminates the need for a precise control of the diamond layer surface hydrogen-termination, since BDD layer inherently exhibits p-type bulk semiconductive characteristics due to the presence of boron atoms. To enhance the sensitivity of the gas sensors based on BDD during room-temperature operation, a sensor comprised of BDD and Pd-SnO₂ layer in the form of a BDD/Pd-SnO₂ heterostructure was fabricated and investigated. The hybrid BDD/Pd-SnO₂ sensor exhibited an improved response in the presence of oxidizing NO₂ gas when compared to BDD-based sensors, and its sensitivity and recovery characteristics were further enhanced upon photo-assisted (illumination with UV) gas sensing, demonstrating the potential of BDD-based hybrid/heterojunction structures as a platform for the construction of gas sensors operating at room-temperature.

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如今，化学电阻式气体传感器被视为监测各种有害空气污染物的快速、准确、廉价和有效的仪器。然而，目前用于此类气体传感器的大多数传感材料都需要一个活化步骤，即向传感材料提供额外的热能，以实现传感表面与目标气体分子之间必要的相互作用。在这项工作中，研究了纳米晶掺硼金刚石（BDD）作为化学电阻式气体传感器的活性层/元件的应用，重点是气体传感器在氧化性气体（二氧化氮、一氧化碳）和还原性气体（NH3）存在下的室温运行情况。与之前使用纳米晶金刚石（NCD）作为气体传感层的报道不同，使用 BDD 层无需精确控制金刚石层表面的氢端，因为 BDD 层由于硼原子的存在而固有地表现出 p 型体半导电特性。为了提高基于 BDD 的气体传感器在室温工作时的灵敏度，我们制作并研究了一种由 BDD 和 Pd-SnO2 层组成的 BDD/Pd-SnO2 异质结构传感器。

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...