Improved Dielectric and Energy Storage Performance of BOPP Film by Decreasing Ambient Temperature

IF 2.9 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Dielectrics and Electrical Insulation Pub Date : 2024-09-30 DOI:10.1109/TDEI.2024.3470757

Ke Chen;B. X. Du;Haoliang Liu;Meng Xiao

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Abstract

In this article, the effect of low temperature on biaxially oriented polypropylene (BOPP) is reported. The experimental results show that the films have improved dielectric and energy storage properties with the ambient temperature decreasing. The highest dc breakdown strength as high as 861.9 kV/mm is obtained at −196 °C, signifying a substantial 30.3% enhancement compared to that at 20 °C. It can be attributed to that the vitreous molecular chain structure has higher intermolecular forces to protect the molecular chain from being destroyed. Furthermore, the maximum discharge energy density attains 7.16 J/cm3, achieving a commendable efficiency of 91.08%. The migration behavior of carriers at low temperatures is inhibited, which diminishes the conductivity current. The dc conductivity is reduced by three orders of magnitude. The initial voltage of partial discharge (PD) is 1.81 times higher than that at room temperature. This article provides a new direction and insight for the development of film capacitors with high energy density and low loss.

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降低环境温度可提高BOPP薄膜的介电和储能性能

本文报道了低温对双轴取向聚丙烯（BOPP）性能的影响。实验结果表明，薄膜的介电性能和储能性能随着环境温度的降低而提高。在- 196°C下获得了最高的直流击穿强度，高达861.9 kV/mm，与20°C相比，提高了30.3%。这可归因于玻璃体分子链结构具有较高的分子间作用力，以保护分子链不被破坏。最大放电能量密度达到7.16 J/cm3，效率达到91.08%。载流子在低温下的迁移行为受到抑制，从而减小了导电电流。直流电导率降低了三个数量级。局部放电（PD）的初始电压比室温时高1.81倍。本文为高能量密度、低损耗薄膜电容器的发展提供了新的方向和思路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Dielectrics and Electrical Insulation 工程技术-工程：电子与电气

CiteScore

6.00

自引率

22.60%

发文量

309

审稿时长

5.2 months

期刊介绍： Topics that are concerned with dielectric phenomena and measurements, with development and characterization of gaseous, vacuum, liquid and solid electrical insulating materials and systems; and with utilization of these materials in circuits and systems under condition of use.