Selective epitaxial growth of silicon induced by localized surface plasmon

Abstract

Localized surface plasmons (LSPs) can drive a variety of chemical reactions. However, chemical vapor deposition (CVD) encompasses additional processes, such as byproduct desorption and atomic diffusion. It remains uncertain whether the atomic ordering can be achieved through LSPs-induced CVD. Here, we achieve selective epitaxial growth of silicon from silane by utilizing femtosecond laser excitation to induce intense LSP effect. A model has been proposed wherein plasmonic hot electrons facilitate the desorption of hydrogen and potentially accelerate the silicon atoms diffusion during silicon crystal growth.