Development of Semi-Insulating gallium nitride layers on native substrates by magnesium ion implantation and Ultra-High-Pressure annealing

IF 6.3 2区材料科学 Q2 CHEMISTRY, PHYSICAL

Applied Surface Science Pub Date : 2025-04-05 DOI:10.1016/j.apsusc.2025.163155

Tomasz Sochacki, Lutz Kirste, Kacper Sierakowski, Arianna Jaroszyńska, Rafal Jakiela, Michał Fijałkowski, Karolina Grabiańska, Marcin Zając, Julita Smalc Koziorowska, Artur Lachowski, Marcin Turek, Patrik Straňák, Kensuke Sumida, Michał Boćkowski

{"title":"Development of Semi-Insulating gallium nitride layers on native substrates by magnesium ion implantation and Ultra-High-Pressure annealing","authors":"Tomasz Sochacki, Lutz Kirste, Kacper Sierakowski, Arianna Jaroszyńska, Rafal Jakiela, Michał Fijałkowski, Karolina Grabiańska, Marcin Zając, Julita Smalc Koziorowska, Artur Lachowski, Marcin Turek, Patrik Straňák, Kensuke Sumida, Michał Boćkowski","doi":"10.1016/j.apsusc.2025.163155","DOIUrl":null,"url":null,"abstract":"In the presented research, we explore the possibility of modifying the electrical properties of ammonothermal gallium nitride substrates through ion implantation of magnesium and ultra-high-pressure annealing (UHPA). The goal is to achieve a semi-insulating gallium nitride template on a highly conducting gallium nitride substrate. The substrates are implanted with magnesium ions to create a reservoir of magnesium atoms near the surface. By annealing the samples at high temperatures (∼1450 °C), the aim is to achieve magnesium doping by diffusion from the implanted region. Secondary ion mass spectrometry reveal that the diffusion of magnesium extended up to 12 µm towards the bulk of the sample with a constant concentration of 2–3 × 10<sup>18</sup> cm<sup>-3</sup>. High-resolution X-ray diffraction measurements confirm that the high structural perfection of ammonothermal gallium nitride substrates was restored after the UHPA, and the implantation-induced damage was removed from the crystals. Transmission electron microscopy is used to observe defects in the crystal structure at the atomic level. The segregation of magnesium isn’t observed, indicating a high rate of magnesium activation after annealing according to literature. To assess the electrical properties of the implanted and annealed samples, Hall measurements is performed. The results show successful fabrication of a semi-insulating layer.","PeriodicalId":247,"journal":{"name":"Applied Surface Science","volume":"25 1","pages":""},"PeriodicalIF":6.3000,"publicationDate":"2025-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Surface Science","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1016/j.apsusc.2025.163155","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}

引用次数: 0

Abstract

In the presented research, we explore the possibility of modifying the electrical properties of ammonothermal gallium nitride substrates through ion implantation of magnesium and ultra-high-pressure annealing (UHPA). The goal is to achieve a semi-insulating gallium nitride template on a highly conducting gallium nitride substrate. The substrates are implanted with magnesium ions to create a reservoir of magnesium atoms near the surface. By annealing the samples at high temperatures (∼1450 °C), the aim is to achieve magnesium doping by diffusion from the implanted region. Secondary ion mass spectrometry reveal that the diffusion of magnesium extended up to 12 µm towards the bulk of the sample with a constant concentration of 2–3 × 10¹⁸ cm^-3. High-resolution X-ray diffraction measurements confirm that the high structural perfection of ammonothermal gallium nitride substrates was restored after the UHPA, and the implantation-induced damage was removed from the crystals. Transmission electron microscopy is used to observe defects in the crystal structure at the atomic level. The segregation of magnesium isn’t observed, indicating a high rate of magnesium activation after annealing according to literature. To assess the electrical properties of the implanted and annealed samples, Hall measurements is performed. The results show successful fabrication of a semi-insulating layer.

Abstract Image

查看原文本刊更多论文

求助全文

约1分钟内获得全文求助全文

来源期刊

Applied Surface Science 工程技术-材料科学：膜

CiteScore

12.50

自引率

7.50%

发文量

3393

审稿时长

67 days

期刊介绍： Applied Surface Science covers topics contributing to a better understanding of surfaces, interfaces, nanostructures and their applications. The journal is concerned with scientific research on the atomic and molecular level of material properties determined with specific surface analytical techniques and/or computational methods, as well as the processing of such structures.