Ultra-low-crosstalk silicon switches driven thermally and electrically.

IF 7.3 1区 工程技术 Q1 INSTRUMENTS & INSTRUMENTATION
Peng Bao, Chunhui Yao, Chenxi Tan, Alan Yilun Yuan, Minjia Chen, Seb J Savory, Richard Penty, Qixiang Cheng
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引用次数: 0

Abstract

Silicon photonic switches are widely considered as a cost-effective solution for addressing the ever-growing data traffic in datacenter networks, as they offer unique advantages such as low power consumption, low latency, small footprint and high bandwidth. Despite extensive research efforts, crosstalk in large-scale photonic circuits still poses a threat to signal integrity. In this paper, we present two designs of silicon Mach-Zehnder Interferometer (MZI) switches achieving ultra-low-crosstalk, driven thermally and electrically. Each switch fabric is optimized at both the device and circuit level to suppress crosstalk and reduce system complexity. Notably, for the first time to the best of our knowledge, we harness the inherent self-heating effect in a carrier-injection-based MZI switch to create a pair of phase shifters that offers arbitrary phase differences. Such a pair of phase shifters induces matched insertion loss at each arm, thus minimizing crosstalk. Experimentally, an ultra-low crosstalk ratio below -40 dB is demonstrated for both thermo-optic (T-O) and electro-optic (E-O) switches. The T-O switch exhibits an on-chip loss of less than 5 dB with a switching time of 500 µs, whereas the E-O switch achieves an on-chip loss as low as 8.5 dB with a switching time of under 100 ns. In addition, data transmission of a 50 Gb/s on-off keying signal is demonstrated with high fidelity on the E-O switch, showing the great potential of the proposed switch designs.

硅光子交换机具有低功耗、低延迟、占地面积小和高带宽等独特优势,被广泛认为是解决数据中心网络中日益增长的数据流量问题的经济高效的解决方案。尽管开展了大量研究工作,但大规模光子电路中的串扰仍对信号完整性构成威胁。在本文中,我们介绍了两种实现超低串扰、热驱动和电驱动的硅马赫-泽恩德干涉仪(MZI)开关设计。每种开关结构都在器件和电路层面进行了优化,以抑制串扰并降低系统复杂性。值得注意的是,据我们所知,我们首次利用基于载流子注入的 MZI 开关中固有的自加热效应,创建了一对可提供任意相位差的移相器。这样一对移相器可在每个臂上产生匹配的插入损耗,从而最大限度地减少串扰。实验证明,热-光(T-O)和电-光(E-O)开关的超低串扰比均低于-40 dB。T-O 开关的片上损耗低于 5 dB,开关时间为 500 µs,而 E-O 开关的片上损耗低至 8.5 dB,开关时间不到 100 ns。此外,E-O 交换机还高保真地演示了 50 Gb/s 开关键控信号的数据传输,显示了拟议交换机设计的巨大潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Microsystems & Nanoengineering
Microsystems & Nanoengineering Materials Science-Materials Science (miscellaneous)
CiteScore
12.00
自引率
3.80%
发文量
123
审稿时长
20 weeks
期刊介绍: Microsystems & Nanoengineering is a comprehensive online journal that focuses on the field of Micro and Nano Electro Mechanical Systems (MEMS and NEMS). It provides a platform for researchers to share their original research findings and review articles in this area. The journal covers a wide range of topics, from fundamental research to practical applications. Published by Springer Nature, in collaboration with the Aerospace Information Research Institute, Chinese Academy of Sciences, and with the support of the State Key Laboratory of Transducer Technology, it is an esteemed publication in the field. As an open access journal, it offers free access to its content, allowing readers from around the world to benefit from the latest developments in MEMS and NEMS.
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