Luminescent afterglow and storage behavior in Mg2+/Sr2+-doped C12A7: Tb3+ photo-stimulate phosphors

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-05 DOI:10.1007/s10854-025-14706-1

Shengnan Li, Jian Shu, Fumin Shang, Xiao Zhang, Yi Jiang, Yu Meng, Lan Yu, Lu Liu, Rongyun Jiang

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引用次数: 0

Abstract

A series of alkaline earth ions (Mg²⁺/Sr²⁺)-doped 12CaO·7Al₂O₃:Tb³⁺ (C12A7:Tb³⁺) photo-stimulated luminescence (PSL) phosphors were synthesized via a combustion method combined with heat treatment. XRD Rietveld refinement parameters confirmed that the cage structure undergoes distortion after doping with alkaline earth ions. Photoluminescence (PL) and lifetime spectra indicate that doping induces nanocage distortion in C12A7. PSL spectra demonstrate that this distortion can influence the traps in C12A7:Tb³⁺, Mg²⁺ (C12A7:Tb–Mg), C12A7:Tb³⁺ (C12A7:Tb), and C12A7:Tb³⁺, Sr²⁺ (C12A7:Tb–Sr) phosphors. Thermoluminescence (TL) curves reveal that after the incorporation of Mg²⁺ ions, the trap depth and distribution become shallower for trap 1 and deeper for trap 2. Additionally, the half-peak width of the TL peak (trap 1) increases with the radius of the alkaline earth ions (from 45.5 to 84 K). TL curves irradiated by X-rays show that the number of trapped electrons is related to the atomic number of the doped alkaline earth ions. TL spectra at different resting times confirm that the electron trapping process involves filling shallow traps first, followed by deep traps. This study demonstrates that alkaline earth ions (Mg²⁺/Sr²⁺)-doped C12A7:Tb³⁺ represents a promising doping strategy for multi-responsive smart platforms. It is hoped that this work will provide new insights and guidelines for the rational design and performance optimization of electron trap materials.

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掺杂 Mg2+/Sr2+ 的 C12A7：Tb3+ 光刺激荧光粉的发光余辉和储存行为

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.