Response mechanism of interfacial spacing driven load induced tribological behavior and charge density evolution for C/Cu fretting

IF 4.3 3区 材料科学 Q2 MATERIALS SCIENCE, COATINGS & FILMS
Liyuan Xu , Zhijun Shi , Deng Pan , Hao Jiang , Dianlong Wang , Qingxiang Yang , Zbigniew Brytan , Xiaolei Xing , Yefei Zhou
{"title":"Response mechanism of interfacial spacing driven load induced tribological behavior and charge density evolution for C/Cu fretting","authors":"Liyuan Xu ,&nbsp;Zhijun Shi ,&nbsp;Deng Pan ,&nbsp;Hao Jiang ,&nbsp;Dianlong Wang ,&nbsp;Qingxiang Yang ,&nbsp;Zbigniew Brytan ,&nbsp;Xiaolei Xing ,&nbsp;Yefei Zhou","doi":"10.1016/j.diamond.2025.112274","DOIUrl":null,"url":null,"abstract":"<div><div>Fretting is a major failure mode in electronic connectors within micro-electro-mechanical systems (MEMS). Understanding the friction-induced changes in interfacial electronic properties and their link to the structural evolution of diamond‑copper composites is crucial for controlling fretting in practical applications. This study examines the charge density evolution Δρ at the C(111)/Cu(111) interface and its intrinsic correlation with fretting performance under varying loads and interatomic spacings across different fretting directions. Synchronized variations in Δρ and potential energy difference ΔE are observed. Under constant fretting directions, the correlation coefficient <span><math><msub><mi>k</mi><msub><mi>F</mi><mi>N</mi></msub></msub></math></span> for ΔE and Δρ, and interatomic spacing Δz increase with load. When load varies, <span><math><msub><mi>k</mi><msub><mi>F</mi><mi>N</mi></msub></msub></math></span> shows an inverse trend relative to Δz under identical atomic spacing conditions, while their variation rates align. These findings provide an electron-level understanding of fretting mechanisms, offering a theoretical basis for designing durable, high-performance microelectronic devices.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"155 ","pages":"Article 112274"},"PeriodicalIF":4.3000,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Diamond and Related Materials","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0925963525003310","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, COATINGS & FILMS","Score":null,"Total":0}
引用次数: 0

Abstract

Fretting is a major failure mode in electronic connectors within micro-electro-mechanical systems (MEMS). Understanding the friction-induced changes in interfacial electronic properties and their link to the structural evolution of diamond‑copper composites is crucial for controlling fretting in practical applications. This study examines the charge density evolution Δρ at the C(111)/Cu(111) interface and its intrinsic correlation with fretting performance under varying loads and interatomic spacings across different fretting directions. Synchronized variations in Δρ and potential energy difference ΔE are observed. Under constant fretting directions, the correlation coefficient kFN for ΔE and Δρ, and interatomic spacing Δz increase with load. When load varies, kFN shows an inverse trend relative to Δz under identical atomic spacing conditions, while their variation rates align. These findings provide an electron-level understanding of fretting mechanisms, offering a theoretical basis for designing durable, high-performance microelectronic devices.

Abstract Image

界面间距驱动载荷诱导C/Cu微动摩擦学行为及电荷密度演化的响应机理
微动是微机电系统(MEMS)中电子连接器的主要失效形式。了解摩擦引起的界面电子性能变化及其与金刚石-铜复合材料结构演变的联系,对于在实际应用中控制微动至关重要。本研究考察了C(111)/Cu(111)界面的电荷密度演变Δρ及其在不同载荷和不同微动方向上原子间间距下与微动性能的内在相关性。观察到Δρ和位能差ΔE的同步变化。在恒微动方向下,随着载荷的增大,ΔE和Δρ的相关系数kFN和原子间间距Δz均增大。当负载变化时,在相同原子间距条件下,kFN相对于Δz呈现相反的趋势,而它们的变化率是一致的。这些发现提供了对微动机制的电子级理解,为设计耐用、高性能的微电子器件提供了理论基础。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Diamond and Related Materials
Diamond and Related Materials 工程技术-材料科学:综合
CiteScore
6.00
自引率
14.60%
发文量
702
审稿时长
2.1 months
期刊介绍: DRM is a leading international journal that publishes new fundamental and applied research on all forms of diamond, the integration of diamond with other advanced materials and development of technologies exploiting diamond. The synthesis, characterization and processing of single crystal diamond, polycrystalline films, nanodiamond powders and heterostructures with other advanced materials are encouraged topics for technical and review articles. In addition to diamond, the journal publishes manuscripts on the synthesis, characterization and application of other related materials including diamond-like carbons, carbon nanotubes, graphene, and boron and carbon nitrides. Articles are sought on the chemical functionalization of diamond and related materials as well as their use in electrochemistry, energy storage and conversion, chemical and biological sensing, imaging, thermal management, photonic and quantum applications, electron emission and electronic devices. The International Conference on Diamond and Carbon Materials has evolved into the largest and most well attended forum in the field of diamond, providing a forum to showcase the latest results in the science and technology of diamond and other carbon materials such as carbon nanotubes, graphene, and diamond-like carbon. Run annually in association with Diamond and Related Materials the conference provides junior and established researchers the opportunity to exchange the latest results ranging from fundamental physical and chemical concepts to applied research focusing on the next generation carbon-based devices.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信