{"title":"Impact of In2O3 content on the structural, thermal, and mechanical hallmarks of Na2O-BaO-ZnO-Fe2O3-P2O5 glass systems","authors":"S. Ibrahim, Z. Y. Khattari, Ebrahim A. Mahdy","doi":"10.1007/s10854-025-14680-8","DOIUrl":null,"url":null,"abstract":"<div><p>Five glass compositions of the form 20Na₂O–15BaO–10ZnO–(9–x)Fe₂O₃–xIn₂O₃–46P₂O₅, where 0 ≤ x ≤ 9.0 mol%, were synthesized using a traditional melting method under ambient conditions. In these glass systems, In₂O₃ was used to partially substitute Fe₂O₃. The impact of In₂O₃ content on the structural, thermal, and mechanical properties of the glasses were thoroughly investigated. Complete characterizations were carried out using XRD, DSC, and measurements of density and molar volume. Elastic parameters, including Poisson’s ratio, were also studied. The XRD patterns confirm the amorphous nature of the examined samples. The measured glass density increased linearly (3.57–3.83 g/cm<sup>3</sup>), while the calculated molar volume decreased linearly (34.48–34.11 cm<sup>3</sup>/mol). The DSC analysis indicates that indium ions predominantly occupy network-forming positions, enhancing the rigidity of the glass network. Additionally, as inferred from the DSC data, the thermo-physical parameters T<sub>g</sub>, T<sub>p</sub>, and glass stability (∆GS) increased almost proportionally as In₂O₃ content was added, while the heat capacity change (∆C<sub>p</sub>) showed an inverse relationship. Regarding the mechanical properties, all elastic parameters decreased due to the compositional changes from In₂O₃/Fe₂O₃ modifications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 10","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14680-8","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Five glass compositions of the form 20Na₂O–15BaO–10ZnO–(9–x)Fe₂O₃–xIn₂O₃–46P₂O₅, where 0 ≤ x ≤ 9.0 mol%, were synthesized using a traditional melting method under ambient conditions. In these glass systems, In₂O₃ was used to partially substitute Fe₂O₃. The impact of In₂O₃ content on the structural, thermal, and mechanical properties of the glasses were thoroughly investigated. Complete characterizations were carried out using XRD, DSC, and measurements of density and molar volume. Elastic parameters, including Poisson’s ratio, were also studied. The XRD patterns confirm the amorphous nature of the examined samples. The measured glass density increased linearly (3.57–3.83 g/cm3), while the calculated molar volume decreased linearly (34.48–34.11 cm3/mol). The DSC analysis indicates that indium ions predominantly occupy network-forming positions, enhancing the rigidity of the glass network. Additionally, as inferred from the DSC data, the thermo-physical parameters Tg, Tp, and glass stability (∆GS) increased almost proportionally as In₂O₃ content was added, while the heat capacity change (∆Cp) showed an inverse relationship. Regarding the mechanical properties, all elastic parameters decreased due to the compositional changes from In₂O₃/Fe₂O₃ modifications.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.