High Responsivity in Near-Infrared Phototransistor With Oriented Polymer Semiconductors

IF 2.2 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Sensors Letters Pub Date : 2025-03-19 DOI:10.1109/LSENS.2025.3549783

Manish Pandey;Shubham Sharma;Shyam S. Pandey;Masakazu Nakamura

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Abstract

Near-infrared organic phototransistors (OPTs) in bottom-gated top-contact structures are being reported using an oriented p-type diketopyrrolopyrrole-based semiconducting polymer (SCP) (DPPT-TT). Here, highly oriented DPPT-TT floating films were prepared on a liquid substrate using the unidirectional floating-film transfer method (UFTM) and then utilized as the active layer. This innovative approach exhibits a dual-orientation advantage: They align polymer chains unidirectionally, enhancing charge transport along the backbone while simultaneously promoting an edge-on molecular arrangement relative to the substrate. This combination, coupled with highly uniform thin films, facilitates efficient charge transport pathways, contributing significantly to the fabrication of high-performance OPTs. Our DPPT-TT-based OPT exhibited a high field-effect mobility of 1.5 cm²·V⁻¹·s⁻¹ and photoresponsivity (R) > 10⁵ A·W⁻¹ at an intensity of 45 μW·cm⁻² under 810 nm light illumination. This exceptional performance is attributed to faster carrier transport and efficient charge collection in the oriented DPPT-TT films enabled by the UFTM.

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面向聚合物半导体近红外光电晶体管的高响应性研究

采用定向p型二酮吡咯基半导体聚合物（dpt - tt）制备了底门控顶接触结构的近红外有机光电晶体管（OPTs）。本研究采用单向浮膜转移法（UFTM）在液体衬底上制备了高取向DPPT-TT浮膜，并将其作为活性层。这种创新的方法显示出双向优势：它们单向排列聚合物链，增强沿主干的电荷传输，同时促进相对于底物的边缘分子排列。这种结合，加上高度均匀的薄膜，促进了高效的电荷传输途径，为高性能opt的制造做出了重大贡献。在810 nm光照强度为45 μW·cm−2时，基于dpt - t的OPT具有1.5 cm2·V−1·s−1的高场效应迁移率和> 105 a·W−1的光响应率。这种优异的性能归功于UFTM实现的定向dpt - tt薄膜中更快的载流子传输和有效的电荷收集。

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来源期刊

IEEE Sensors Letters Engineering-Electrical and Electronic Engineering

CiteScore

3.50

自引率

7.10%

发文量

194