Room-temperature near-infrared photodetection using a semi-polar n-InN/n-Si heterostructure photodetector

IF 4.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2025-03-17 DOI:10.1016/j.sna.2025.116439

Tahir Rajgoli , Suhas M. Jejurikar , Sandip Hinge , Shashikant D. Shinde

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引用次数: 0

Abstract

Considering the recent advancements in delivering low-cost, room-temperature operated, visible-blind infrared photodetectors for societal applications such as security and telecommunications, we demonstrate a photodetector using a semi-polar n-InN/n-Si heterostructure. We used plasma enhanced laser ablation, a novel technique, to grow semi-polar films of InN on an n-Si substrate at room temperature. Devices fabricated using this simple and resilient method demonstrated IR photodetection. The detection of IR radiation by the device is proposed to be due to enhanced photocurrent, which is caused by charge collection during the surface recombination process upon illumination with short wavelength radiations. The device properties measured using 850 nm radiation at 2 V, with the lowest lux (5000), include a photoresponsivity of 0.93, an external quantum efficiency (EQE) of 1.37, and a specific detectivity of 5.243 × 10⁷ V/lux. The rise and decay time constants of the device are approximately 90 ms and 110 ms, respectively, clearly indicating excellent sensitivity to 850 nm radiation. The performance and the mechanism of IR wavelength detection proposed here suggest the potential use of semi-polar InN films as advanced NIR optical interconnects and power monitoring devices for next-generation detectors.

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...