Turning the magnetically dependent topological phase with electron correlation

Abstract

In materials with unique structures and localized orbital distributions, electron correlation effects play a crucial role in determining their electronic properties. In the present work, we investigate the FeBrF monolayer through the Hubbard+U method to elucidate the underlying mechanisms linking electron correlation effects with magnetization-dependent topological phase transitions. The study demonstrates that electron correlation effects can significantly influence the Berry curvature, thereby driving topological phase transitions. The topologically protected edge states demonstrate robustness against magnetization angular variations. Even when the magnetization direction is close to the in-plane orientation, dissipationless chiral edge states can still be observed in the system. Our work provides new insights for the design of next-generation low-power electronic devices.