Jaeeun Yoon, Ki Hong Park, Seungjun Lee, Taehee Kim, Gwan Hyun Choi, Albert S. Lee, Seon Joon Kim, Chong Min Koo, Taegon Oh
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引用次数: 0
Abstract
Aqueous hydrofluoric acid (HF)-based solutions are widely used for etching MAX phases to synthesize high-purity 2D molybdenum carbides (MXenes). However, their applicability is limited to selected MAX phases, and the production of certain MXenes, such as Mo-based MXenes, remains challenging owing to low quality, low yield, and the time-intensive process, often requiring several days to weeks. In this study, a non-aqueous etchant for faster and more efficient synthesis of high-purity Mo-based MXenes is introduced. This etchant, containing Cl− and F− ions, is adequately effective to etch the MAX phase using the F− ions of moderate concentration regenerated from GaF63− byproducts but only mildly caustic to prevent damage to the resulting MXene. Using this approach, the rapid production of Mo2CTx is demonstrated within 24 h at 100 °C, achieving up to 90% multilayer and 45% monolayer yields. Furthermore, the resulting monolayer Mo2CTx flake exhibits larger sizes and fewer defects, with an electrical conductivity of 5.9 S cm−1, 6.5 times higher than that (0.9 S cm−1) of aqueous HF-Mo2CTx. This enhancement results in improved electrocatalytic activity of high-purity Mo2CTx for hydrogen evolution reactions. These findings highlight the potential of non-aqueous etching solutions to address the limitations of HF-based MXene synthesis.
基于氢氟酸(HF)的水溶液被广泛用于蚀刻MAX相以合成高纯度的二维碳化钼(MXenes)。然而,它们的适用性仅限于选定的MAX相,而且某些MXenes的生产,如钼基MXenes,由于质量低、产量低和时间密集的过程,通常需要几天到几周的时间,仍然具有挑战性。本研究介绍了一种快速高效合成高纯度钼基MXenes的非水腐蚀剂。这种蚀刻剂含有Cl -和F -离子,可以充分有效地利用GaF63 -副产物再生的中等浓度的F -离子来蚀刻MAX相,但只有轻微的腐蚀性,以防止产生的MXene的破坏。使用这种方法,在100°C下24小时内快速生产Mo2CTx,多层产率高达90%,单层产率高达45%。此外,所得单层Mo2CTx薄片具有更大的尺寸和更少的缺陷,电导率为5.9 S cm−1,是水相HF-Mo2CTx (0.9 S cm−1)的6.5倍。这种增强结果提高了高纯度Mo2CTx对析氢反应的电催化活性。这些发现突出了非水蚀刻溶液解决hf基MXene合成限制的潜力。
期刊介绍:
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