A review of metal oxide semiconductors: Progress in solution-processed photovoltaic Technologies

IF 5.8 2区 材料科学 Q2 CHEMISTRY, PHYSICAL
Jiangkai Yu, Yujia Dou, Ju Zhao, Shengtian Zhu, Kai Zhang, Fei Huang
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引用次数: 0

Abstract

Metal oxide semiconductors have emerged as a cornerstone in the development of solution-processed photovoltaic devices, driven by their unique physical and chemical properties. This review highlights the multifunctional roles of four key metal oxides-zinc oxide (ZnO), nickel oxide (NiOX), tin oxide (SnO2), and titanium oxide (TiO2) in enhancing the performance and stability of organic and perovskite solar cells. These materials serve as electron and hole transport layers and demonstrate exceptional properties such as high carrier mobility, optical transparency, chemical stability, and tunable energy level. It also delves into strategies such as doping, interfacial engineering, and defect control to address challenges related to efficiency and stability. By analyzing practical examples, the review highlights how these optimization approaches drive breakthroughs in device efficiency, stability, and scalability. Through a comprehensive analysis of these metal oxides, this review underscores their critical role in achieving efficient, cost-effective, and scalable solution-processed photovoltaic technologies. Furthermore, it provides researchers with actionable technical insights and development strategies, fostering continuous advancements in renewable energy technologies and contributing to the global pursuit of sustainable energy solutions.
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来源期刊
Journal of Alloys and Compounds
Journal of Alloys and Compounds 工程技术-材料科学:综合
CiteScore
11.10
自引率
14.50%
发文量
5146
审稿时长
67 days
期刊介绍: The Journal of Alloys and Compounds is intended to serve as an international medium for the publication of work on solid materials comprising compounds as well as alloys. Its great strength lies in the diversity of discipline which it encompasses, drawing together results from materials science, solid-state chemistry and physics.
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