Sanjida Akter, Dinelka Somaweera, Khalil As’Ham, Salah Abdo, Andrey E. Miroshnichenko, Haroldo Takashi Hattori
{"title":"High-Performance Near-Ultraviolet Photodetector Using Mo2C/SiC Heterostructure","authors":"Sanjida Akter, Dinelka Somaweera, Khalil As’Ham, Salah Abdo, Andrey E. Miroshnichenko, Haroldo Takashi Hattori","doi":"10.1002/adpr.202400210","DOIUrl":null,"url":null,"abstract":"<p>In this work, the results for a fabricated photodetector (PD) based on a molybdenum carbide (Mo<sub>2</sub>C) layer integrated with an n-doped 4H-silicon carbide (SiC) substrate, designed to operate in the near-ultraviolet, are presented. The Mo<sub>2</sub>C layer is sputtered onto a cleaned SiC substrate, followed by the deposition of aluminum (Al) electrodes using electron beam evaporation to complete the PD structure. The fabricated PD is characterized under 405 nm ultraviolet (UV) light, revealing a maximum responsivity of 3.6 A W<sup>−1</sup> and detectivity of 2.11 × 10<sup>8</sup> at a bias voltage of −2.5 V.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"6 4","pages":""},"PeriodicalIF":3.7000,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202400210","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Photonics Research","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/adpr.202400210","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, the results for a fabricated photodetector (PD) based on a molybdenum carbide (Mo2C) layer integrated with an n-doped 4H-silicon carbide (SiC) substrate, designed to operate in the near-ultraviolet, are presented. The Mo2C layer is sputtered onto a cleaned SiC substrate, followed by the deposition of aluminum (Al) electrodes using electron beam evaporation to complete the PD structure. The fabricated PD is characterized under 405 nm ultraviolet (UV) light, revealing a maximum responsivity of 3.6 A W−1 and detectivity of 2.11 × 108 at a bias voltage of −2.5 V.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
