Impact of interface defects and doping levels on bismuth-based double perovskite solar cells: a numerical modeling approach

IF 3.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Optical and Quantum Electronics Pub Date : 2025-04-03 DOI:10.1007/s11082-025-08158-4

Abdullah Alghafis, Md Khan Sobayel Bin Rafiq

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引用次数: 0

Abstract

As perovskite solar cell (PSC) technology nears commercialization, concerns about lead content and biodegradability remain significant. Lead-free double perovskite materials, like Cs₂AgBiBr₆, have garnered attention for their reduced toxicity and improved stability. Cs₂AgBiBr₆ perovskites, in particular, show promise for photovoltaic applications due to these benefits. In this paper, we propose the design and conduct numerical simulations of a double perovskite solar cell based on Cs₂AgBiBr₆, aiming to address the need for safer and more stable alternatives in PSC technology. The initial tested cell, derived from experimental work, features a hydrogenated Cs₂AgBiBr₆ layer with an unprecedented low bandgap of 1.64 eV. The cell structure, FTO/TiO₂/Cs₂AgBiBr₆/Spiro-OMeTAD/Metal back contact (Flat Band, φ_m = 5.18 eV), achieved a maximum power conversion efficiency (PCE) of 26.61%. It also recorded an open-circuit voltage (V_oc) of 1.58 V, a short-circuit current density (J_sc) of 20.98 mA/cm², and a fill factor (FF) of 80.10% at an optimal absorber layer thickness of 800 nm. Both bulk and interface defects were analyzed, revealing that optimizing the interface between the HTL and perovskite is more critical than the ETL/perovskite interface due to higher recombination current at the HTL/perovskite interface. Overall, the simulation results from this study provide valuable insights for designing environmentally friendly perovskite solar cells.

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来源期刊

Optical and Quantum Electronics 工程技术-工程：电子与电气

CiteScore

4.60

自引率

20.00%

发文量

810

审稿时长

3.8 months

期刊介绍： Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.