Influence of Gap Between Electrode and Ceramic on Breakdown Voltage Under Atmospheric Conditions

IF 2.9 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Dielectrics and Electrical Insulation Pub Date : 2025-01-06 DOI:10.1109/TDEI.2025.3526567

Ao Xu;Lin Yang;Yuanjie Shi

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Abstract

Surface flashover characteristics under atmospheric conditions are very important for the performance of devices. However, after the metal–ceramic–metal structure is assembled, there may be a gap between the metal electrode and the ceramic, which will affect the withstand voltage performance. In order to study this situation, metal–ceramic–metal structures with electrode spacing of 0.5–2.5 mm in the atmosphere are studied in this article, the influence of a 0.2-mm gap between the electrode and the ceramic is analyzed by measuring the breakdown voltage and diagnosing the luminescence of the breakdown process; then, the simulation model is established by using a particle-in-cell-coupled Monte Carlo collision (PIC-MCC) code, the density distributions of electrons and ions during the breakdown process are presented, and the influence of electric field on electrons motion is analyzed. Finally, the influence of different surface distances on breakdown voltage is explained. This provides support for further improving the withstand voltage performance of devices.

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常压条件下电极与陶瓷间隙对击穿电压的影响

大气条件下的表面闪络特性对器件的性能至关重要。但是，在金属-陶瓷-金属结构组装完成后，金属电极与陶瓷之间可能存在间隙，从而影响耐压性能。为了研究这种情况，本文研究了大气中电极间距为0.5 ~ 2.5 mm的金属-陶瓷-金属结构，通过测量击穿电压和诊断击穿过程的发光，分析了电极与陶瓷之间0.2 mm间隙的影响；在此基础上，利用粒子耦合蒙特卡罗碰撞（PIC-MCC）程序建立了模拟模型，给出了击穿过程中电子和离子的密度分布，并分析了电场对电子运动的影响。最后，分析了不同表面距离对击穿电压的影响。这为进一步提高设备的耐压性能提供了支持。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Dielectrics and Electrical Insulation 工程技术-工程：电子与电气

CiteScore

6.00

自引率

22.60%

发文量

309

审稿时长

5.2 months

期刊介绍： Topics that are concerned with dielectric phenomena and measurements, with development and characterization of gaseous, vacuum, liquid and solid electrical insulating materials and systems; and with utilization of these materials in circuits and systems under condition of use.