Yuziyu Gui , Xiaotian Chen , Xiaoxiao Zhu , Hao Fu , Xuesong Jiang , Jifei Sun , Ling Wang , Boyuan Ban , Jian Chen
{"title":"Quartz lattice Al impurity Removal: A simple annealing − leaching process and analysis","authors":"Yuziyu Gui , Xiaotian Chen , Xiaoxiao Zhu , Hao Fu , Xuesong Jiang , Jifei Sun , Ling Wang , Boyuan Ban , Jian Chen","doi":"10.1016/j.matlet.2025.138478","DOIUrl":null,"url":null,"abstract":"<div><div>High-purity quartz is crucial in photovoltaics and semiconductors, but lattice Al impurities seriously limit its applications. A simple fluorine-free annealing-leaching process for removing lattice Al impurities from quartz is proposed. Pretreatment adjusts impurity distribution, reducing Al from 490.602 ppm to 67.109 ppm, and then annealing drives impurities to the surface. After annealing-leaching, Al content drops to 22.317 ppm, with a 66.75% removal rate. Compared to the original sample, over 95% of Al is removed. SEM, XRD, and XPS are used to analyze Al diffusion and removal mechanisms.</div></div>","PeriodicalId":384,"journal":{"name":"Materials Letters","volume":"391 ","pages":"Article 138478"},"PeriodicalIF":2.7000,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Letters","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0167577X25005075","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
High-purity quartz is crucial in photovoltaics and semiconductors, but lattice Al impurities seriously limit its applications. A simple fluorine-free annealing-leaching process for removing lattice Al impurities from quartz is proposed. Pretreatment adjusts impurity distribution, reducing Al from 490.602 ppm to 67.109 ppm, and then annealing drives impurities to the surface. After annealing-leaching, Al content drops to 22.317 ppm, with a 66.75% removal rate. Compared to the original sample, over 95% of Al is removed. SEM, XRD, and XPS are used to analyze Al diffusion and removal mechanisms.
期刊介绍:
Materials Letters has an open access mirror journal Materials Letters: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review.
Materials Letters is dedicated to publishing novel, cutting edge reports of broad interest to the materials community. The journal provides a forum for materials scientists and engineers, physicists, and chemists to rapidly communicate on the most important topics in the field of materials.
Contributions include, but are not limited to, a variety of topics such as:
• Materials - Metals and alloys, amorphous solids, ceramics, composites, polymers, semiconductors
• Applications - Structural, opto-electronic, magnetic, medical, MEMS, sensors, smart
• Characterization - Analytical, microscopy, scanning probes, nanoscopic, optical, electrical, magnetic, acoustic, spectroscopic, diffraction
• Novel Materials - Micro and nanostructures (nanowires, nanotubes, nanoparticles), nanocomposites, thin films, superlattices, quantum dots.
• Processing - Crystal growth, thin film processing, sol-gel processing, mechanical processing, assembly, nanocrystalline processing.
• Properties - Mechanical, magnetic, optical, electrical, ferroelectric, thermal, interfacial, transport, thermodynamic
• Synthesis - Quenching, solid state, solidification, solution synthesis, vapor deposition, high pressure, explosive