{"title":"Enhancement of the effect of EDTA and GLY on InP alkaline CMP: Removal rate, surface morphology, and theoretical studies","authors":"Meiling Qi , Ming Sun , Xueli Yang","doi":"10.1016/j.mseb.2025.118288","DOIUrl":null,"url":null,"abstract":"<div><div>Indium phosphide (InP) substrates are essential in high-efficiency photonic integrated circuits. While acidic InP CMP slurries achieve high material removal rates, they produce toxic byproducts; alkaline slurries are safer but generally have lower removal rates. To address this, researchers developed a novel alkaline slurry by selecting ethylenediaminetetraacetic acid (EDTA) and glycine (GLY) as complexing agents.With the addition of 1.1 wt% EDTA and GLY to the alkaline slurry, the material removal rate increased by 176 nm·min<sup>−1</sup> and 162 nm·min<sup>−1</sup>, respectively, and surface roughness decreased. Electrochemical measurements and quantum chemistry (QC) calculations indicate that both chelating agents form complexes with indium on the InP surface via their carboxyl groups. Furthermore, molecular dynamics (MD) simulations and X-ray photoelectron spectroscopy (XPS) analyses suggest that differences in the adsorption strengths of EDTA and GLY on InP and its oxides account for their varying effects.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering: B","volume":"318 ","pages":"Article 118288"},"PeriodicalIF":3.9000,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science and Engineering: B","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0921510725003113","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Indium phosphide (InP) substrates are essential in high-efficiency photonic integrated circuits. While acidic InP CMP slurries achieve high material removal rates, they produce toxic byproducts; alkaline slurries are safer but generally have lower removal rates. To address this, researchers developed a novel alkaline slurry by selecting ethylenediaminetetraacetic acid (EDTA) and glycine (GLY) as complexing agents.With the addition of 1.1 wt% EDTA and GLY to the alkaline slurry, the material removal rate increased by 176 nm·min−1 and 162 nm·min−1, respectively, and surface roughness decreased. Electrochemical measurements and quantum chemistry (QC) calculations indicate that both chelating agents form complexes with indium on the InP surface via their carboxyl groups. Furthermore, molecular dynamics (MD) simulations and X-ray photoelectron spectroscopy (XPS) analyses suggest that differences in the adsorption strengths of EDTA and GLY on InP and its oxides account for their varying effects.
期刊介绍:
The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.