4H-SiC semi-superjunction IGBT with split-gate and back-side trench heterojunction for low loss and low EMI noise

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2025-04-01 DOI:10.1016/j.mejo.2025.106671

Dong Wu , Xiang Guo , Zhao Ding , Wenhan Hou

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引用次数: 0

Abstract

In this paper, a 4H-SiC semi-superjunction insulated gate bipolar transistor (IGBT) featuring a split-gate and back-side trench heterojunction (SGTH-IGBT) is proposed to minimize turn-off loss (E_off) and suppress electromagnetic interference (EMI) noise. The SGTH-IGBT features a self-adaptive hole path (SHP) between the split-gate, enabling controlled hole storage during the on-state and rapid release during the turn-off transient. Additionally, the trench heterojunction establishes an electron extraction path to accelerate carrier removal. Compared to TFS-IGBT, the E_off of the SGTH-IGBT is reduced by 62.5 % under the same on-state voltage (V_on), while achieving a 29.7 % lower V_on than the GS-IGBT at the same E_off. Furthermore, the SGTH-IGBT reduces the Miller charge (Q_gc) by 58.2 % compared to the TFS-IGBT. At the turn-on process, SGTH-IGBT can extract a portion of the holes accumulated at the trench gate bottom. This extraction reduces the reverse displacement current (I_{G_dis}), thereby reducing EMI noise. In comparison to GS-IGBT and TFS-IGBT, the SGTH-IGBT demonstrates significantly better control of dV/dt through R_g.

查看原文本刊更多论文

采用分裂栅极和背面沟槽异质结的 4H-SiC 半超级结 IGBT，可实现低损耗和低 EMI 噪声

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.