{"title":"Excitonic insulator powers room-temperature ultra-sensitive visible to terahertz detection","authors":"Yi Wu, Wenjie Deng, Yongzhe Zhang","doi":"10.1038/s41377-025-01828-8","DOIUrl":null,"url":null,"abstract":"<p>Phase transitions induce significant changes in the electrical and photonic properties of materials. Ultra-sensitive photodetectors leveraging material phase transitions can be realized near the transition temperature. Photodetectors based on Ta<sub>2</sub>NiSe<sub>5</sub>, a room-temperature excitonic insulator phase transition material, exhibit exceptional performance from visible to terahertz frequencies. Specifically, in the terahertz range, the electronic bandwidth is 360 kHz, and the specific detectivity (D*) reaches 5.3 × 10<sup>11</sup> cm·Hz<sup>1/2</sup>·W<sup>−1</sup>. The van der Waals heterostructure of Ta<sub>2</sub>NiSe<sub>5</sub>/WS<sub>2</sub> further enhances performance.</p>","PeriodicalId":18069,"journal":{"name":"Light-Science & Applications","volume":"235 1","pages":""},"PeriodicalIF":20.6000,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Light-Science & Applications","FirstCategoryId":"1089","ListUrlMain":"https://doi.org/10.1038/s41377-025-01828-8","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"OPTICS","Score":null,"Total":0}
引用次数: 0
Abstract
Phase transitions induce significant changes in the electrical and photonic properties of materials. Ultra-sensitive photodetectors leveraging material phase transitions can be realized near the transition temperature. Photodetectors based on Ta2NiSe5, a room-temperature excitonic insulator phase transition material, exhibit exceptional performance from visible to terahertz frequencies. Specifically, in the terahertz range, the electronic bandwidth is 360 kHz, and the specific detectivity (D*) reaches 5.3 × 1011 cm·Hz1/2·W−1. The van der Waals heterostructure of Ta2NiSe5/WS2 further enhances performance.