Chunxu Su, Hong Zhou, Zheyuan Hu, Chenlu Wang, Yue Hao, Jincheng Zhang
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引用次数: 0
Abstract
In this Letter, we report on a p-Cr2O3/n-Ga2O3 vertical heterojunction diode (HJD) with a kilovolt-level breakdown voltage (BV). The chromium oxide (Cr2O3) film was deposited via magnetron sputtering, with a controlled thickness of approximately 20 nm and a hole concentration of 1 × 1016 cm−3. High-resolution transmission electron microscopy of the p-Cr2O3 film reveals a polycrystalline lattice structure. At room temperature, the 40 μm radius HJD exhibits a turn-on voltage (Von) of 1.7 V, a specific on-resistance (Ron, sp) of 4.6 mΩ·cm2, and a BV of 1.96 kV. Notably, the ideality factor (η) of the HJD is 1.07, the closest to 1 among all reported Ga2O3 HJDs, indicating a high-quality interface at the p-Cr2O3/n-Ga2O3 HJ. Additionally, the BVs at 75 and 150 °C are 1.63 and 1.4 kV, respectively, demonstrating the promising potential of p-Cr2O3/n-Ga2O3 HJDs for high-temperature and high-power applications.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
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