Xinyu Zhu, Jiangli Xue, Tingting Zuo, Yadong Ru, Yuefan Xu, Bin Chen, Zhaoshun Gao, Yongsheng Liu
{"title":"Graphene reinforced Cu superfine wires: 100-m length with enhanced mechanical strength and electrical conductivity","authors":"Xinyu Zhu, Jiangli Xue, Tingting Zuo, Yadong Ru, Yuefan Xu, Bin Chen, Zhaoshun Gao, Yongsheng Liu","doi":"10.1007/s10854-025-14612-6","DOIUrl":null,"url":null,"abstract":"<div><p>100-m-long level of copper/graphene composite superfine wires (Cu/Gr wires) with a precise diameter of 100 µm were successfully prepared for the first time. This achievement was accomplished through a combination of hot-pressed sintering and cold drawing techniques, remarkably executed without the need for any intermediate annealing processes, showcasing a significant advancement in material fabrication. As a result, the Cu/Gr wires demonstrated exceptional mechanical strength, reaching 637 MPa, and simultaneously preserved superior electrical conductivity, achieving 95.7% of the International Annealed Copper Standard (IACS), marking a significant advancement in material performance. The enhanced performance is attributed to the in situ growth of high-quality graphene, which is uniformly dispersed throughout the Cu matrix, as well as the formation of nano-twins and dislocations induced by large deformation processing. The present work is poised to deliver premium electrical wires and cables, designed to meet the stringent demands of electric power systems, aerospace, and the transportation industry.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 10","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14612-6","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
100-m-long level of copper/graphene composite superfine wires (Cu/Gr wires) with a precise diameter of 100 µm were successfully prepared for the first time. This achievement was accomplished through a combination of hot-pressed sintering and cold drawing techniques, remarkably executed without the need for any intermediate annealing processes, showcasing a significant advancement in material fabrication. As a result, the Cu/Gr wires demonstrated exceptional mechanical strength, reaching 637 MPa, and simultaneously preserved superior electrical conductivity, achieving 95.7% of the International Annealed Copper Standard (IACS), marking a significant advancement in material performance. The enhanced performance is attributed to the in situ growth of high-quality graphene, which is uniformly dispersed throughout the Cu matrix, as well as the formation of nano-twins and dislocations induced by large deformation processing. The present work is poised to deliver premium electrical wires and cables, designed to meet the stringent demands of electric power systems, aerospace, and the transportation industry.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.